PSMN1R7-40YLD中文資料安世數(shù)據(jù)手冊PDF規(guī)格書

1. General description

200 A, logic level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package

using advanced TrenchMOS Superjunction technology. This product has been designed and

qualified for high performance power switching applications.

2. Features and benefits

? 200 A continuous ID(max) rating

? Avalanche rated, 100 tested at IAS = 180 A

? Strong SOA (linear-mode) rating

? NextPower-S3 technology delivers 'superfast switching with soft body-diode recovery'

? Low QRR, QG and QGD for high system efficiency and low EMI designs

? Schottky-Plus body-diode with low VSD, low QRR, soft recovery and low IDSS leakage

? Optimised for 4.5 V gate drive utilising NextPower-S3 Superjunction technology

? High reliability LFPAK (Power SO8) package, with copper-clip and solder die attach, qualified to

175 °C

? Exposed leads can be wave soldered, visual solder joint inspection and high quality solder

joints

? Low parasitic inductance and resistance

3. Applications

? High-performance synchronous rectification

? DC-to-DC converters

? High performance and high efficiency server power supply

? Brushless DC motor control

? Battery protection

? Load-switch and eFuse

? Inrush management, hotswap