PSMN6R7-40MSD中文資料安世數(shù)據(jù)手冊PDF規(guī)格書

1. General description

50 A, standard level N-channel enhancement mode MOSFET in 175 °C LFPAK33 package using

advanced TrenchMOS Superjunction technology. This product has been designed and qualified for

high efficiency applications at high switching frequencies.

2. Features and benefits

? Avalanche rated, 100 tested

? NextPower-S3 technology delivers 'superfast switching with soft body-diode recovery'

? Low Qrr, QG and QGD for high system efficiency, especially at high switching frequencies

? Low spiking and ringing for low EMI designs

? High reliability clip bonded and solder die attach Mini Power SO8 package; no glue, no wire

bonds, qualified to 175 °C

? Exposed leads can be wave soldered, visual solder joint inspection and high quality solder

joints

? Low parasitic inductance and resistance

3. Applications

? Secondary side synchronous rectification

? DC-to-DC converters

? Brushless DC motor drive

? LED lighting