PSMNR60-25YLH中文資料安世數據手冊PDF規(guī)格書

廠商型號	PSMNR60-25YLH
功能描述	N-channel 25 V, 0.7 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 technology
絲印標識	H6025L
封裝外殼	SOT669
文件大小	308.58 Kbytes
頁面數量	13 頁
生產廠商	Nexperia B.V. All rights reserved
企業(yè)簡稱	NEXPERIA【安世】
中文名稱	安世半導體(中國)有限公司官網
原廠標識
數據手冊	下載地址一下載地址二到原廠下載
更新時間	2025-3-6 20:00:00
人工找貨	PSMNR60-25YLH價格和庫存，歡迎聯系客服免費人工找貨

1. General description

Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package optimized

for low RDSon. Low IDSS leakage even when hot, high efficiency and high current. Rated to 300 A,

optimized for DC load switch and hot-swap applications.

2. Features and benefits

? 100 avalanche tested at I(AS) = 190 A

? Optimized for low RDSon

? Low leakage < 1 μA at 25 °C

? Low spiking and ringing for low EMI designs

? Optimized for 4.5 V gate drive

? Copper-clip for low parasitic inductance and resistance

? High reliability LFPAK package, qualified to 175 °C

? Wave solderable; exposed leads for optimal solder coverage and visual solder inspection

3. Applications

? Hot swap

? e-Fuse

? Power OR-ing

? DC switch / Load switch

? Battery protection

? Brushed and BLDC (brushless) motor control

? Synchronous rectification in AC-DC and DC-DC applications