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首頁 >PST3636NR>規(guī)格書列表

零件編號(hào)	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
PST3636NR	文件：155.25 Kbytes Page：20 Pages	IC for CMOS System Reset	MITSUMIMitsumi Electronics, Corp. 三美三美電機(jī)株式會(huì)社	MITSUMI
PST3636UR	文件：155.25 Kbytes Page：20 Pages	ICforCMOSSystemReset	MITSUMIMitsumi Electronics, Corp. 三美三美電機(jī)株式會(huì)社	MITSUMI
PT3636	文件：196.5 Kbytes Page：1 Pages	HighSensitivityUnipolarSwitch	PROLIFICProlific Technology Inc. 旺玖科技旺玖科技股份有限公司	PROLIFIC
PT3636	文件：196.5 Kbytes Page：1 Pages	3.8V~24Voperation	etc2List of Unclassifed Manufacturers etc未分類制造商etc2未分類制造商	etc2
RMQCBA3636DGBA	文件：849.61 Kbytes Page：30 Pages	36-MbitDDR??IISRAM2-wordBurstArchitecture(2.5CycleReadlatency)	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
RMQCEA3636DGBA	文件：416.34 Kbytes Page：31 Pages	36-MbitDDR?IISRAM2-wordBurstArchitecture(2.5CycleReadlatency)withODT Description TheRMQCEA3636DGBAisa1,048,576-wordby36-bitandtheRMQCEA3618DGBAisa2,097,152-wordby18-bit synchronousquaddataratestaticRAMfabricatedwithadvancedCMOStechnologyusingfullCMOSsix-transistor memorycell.Itintegratesuniquesynchronousperipheralcircuitryand	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
RMQCHA3636DGBA	文件：846.53 Kbytes Page：30 Pages	36-MbitDDR?IISRAM2-wordBurstArchitecture(2.0CycleReadlatency) Description TheRMQCHA3636DGBAisa1,048,576-wordby36-bitandtheRMQCHA3618DGBAisa2,097,152-wordby18-bit synchronousquaddataratestaticRAMfabricatedwithadvancedCMOStechnologyusingfullCMOSsix-transistor memorycell.Itintegratesuniquesynchronousperipheralcircuitryand	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
RMQCLA3636DGBA	文件：885.33 Kbytes Page：30 Pages	36-MbitDDR?IISRAM2-wordBurstArchitecture(2.0CycleReadlatency) Description TheRMQCHA3636DGBAisa1,048,576-wordby36-bitandtheRMQCHA3618DGBAisa2,097,152-wordby18-bit synchronousquaddataratestaticRAMfabricatedwithadvancedCMOStechnologyusingfullCMOSsix-transistor memorycell.Itintegratesuniquesynchronousperipheralcircuitryand	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
RMQSAA3636DGBA	文件：363.53 Kbytes Page：30 Pages	36-MbitQDR?IISRAM4-wordBurstArchitecture(2.5CycleReadlatency) Description TheRMQSAA3636DGBAisa1,048,576-wordby36-bitandtheRMQSAA3618DGBAisa2,097,152-wordby18-bit synchronousquaddataratestaticRAMfabricatedwithadvancedCMOStechnologyusingfullCMOSsix-transistor memorycell.Itintegratesuniquesynchronousperipheralcircuitryand	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
RMQSDA3636DGBA	文件：403.69 Kbytes Page：31 Pages	36-MbitQDR?IISRAM4-wordBurstArchitecture(2.5CycleReadlatency)withODT Description TheRMQSDA3636DGBAisa1,048,576-wordby36-bitandtheRMQSDA3618DGBAisa2,097,152-wordby18-bit synchronousquaddataratestaticRAMfabricatedwithadvancedCMOStechnologyusingfullCMOSsix-transistor memorycell.Itintegratesuniquesynchronousperipheralcircuitryand	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
RMQSGA3636DGBA	文件：359.37 Kbytes Page：30 Pages	36-MbitQDR?IISRAM4-wordBurstArchitecture(2.0CycleReadlatency) Description TheRMQSGA3636DGBAisa1,048,576-wordby36-bitandtheRMQSGA3618DGBAisa2,097,152-wordby18-bit synchronousquaddataratestaticRAMfabricatedwithadvancedCMOStechnologyusingfullCMOSsix-transistor memorycell.Itintegratesuniquesynchronousperipheralcircuitryand	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
RMQSKA3636DGBA	文件：399.71 Kbytes Page：31 Pages	36-MbitQDR?IISRAM4-wordBurstArchitecture(2.0CycleReadlatency)withODT Features PowerSupply 1.8Vforcore(VDD),1.4VtoVDDforI/O(VDDQ) Clock Fastclockcycletimeforhighbandwidth Twoinputclocks(Kand/K)forpreciseDDRtimingatclockrisingedgesonly Twooutputechoclocks(CQand/CQ)simplifydatacaptureinhigh-speedsystems	RENESASRenesas Technology Corp 瑞薩瑞薩科技有限公司	RENESAS
TPESD3636P	文件：1.26449 Mbytes Page：5 Pages	4=ChannelESDProtectionDiodeforUSBType=CandHDMI2.0 Features Ultralowcapacitance:0.25pFtypical(I/Oto1/0) Ultralowleakage:nAlevel BreakdownVoltage:5.5V(Minimum) Lowclampingvoitage Complieswithfollowingstandards: —\|IEC61000-4-2(ESD)immunitytest Airdischarge:+20kV Contactdischarge:+15kV —IEC61000-4-4(EFT)80A(	TECHPUBLICTECH PUBLIC Electronics co LTD 臺(tái)舟電子臺(tái)舟電子股份有限公司	TECHPUBLIC

詳細(xì)參數(shù)

型號(hào)：
PST3636NR
制造商：
MITSUMI
制造商全稱：
Mitsumi Electronics, Corp.
功能描述：
IC for CMOS System Reset

供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫存	備注	價(jià)格
貿(mào)澤芯城（深圳）電子科技有限公司	PST3637NR	MITSUMI	23+	SOT23-5	36840000	原廠授權(quán)一級(jí)代理,專業(yè)海外優(yōu)勢(shì)訂貨,價(jià)格優(yōu)勢(shì)、品種	詢價(jià)
深圳市卓越微芯電子有限公司	PST3638UR	MITSUMI	2020+	SOT	12000	百分百原裝正品真實(shí)公司現(xiàn)貨庫存本公司只做原裝可	詢價(jià)
深圳市鼎欣微電子有限公司	PST3638UR	MITSUMI	21+	SOT	20000	只做正品原裝現(xiàn)貨	詢價(jià)
深圳市威爾健半導(dǎo)體有限公司	PST3638UR	MITSUMI	23+	SOT	50000	全新原裝正品現(xiàn)貨,支持訂貨	詢價(jià)
深圳市特萊科技有限公司	PST3638UR	MITSUMI	24+23+	SOT	12580	16年現(xiàn)貨庫存供應(yīng)商終端BOM表可配單提供樣品	詢價(jià)
深圳市晨豪科技有限公司	PST3638UR	MITSUMI	23+	SOT	89630	當(dāng)天發(fā)貨全新原裝現(xiàn)貨	詢價(jià)
深圳市華來深電子有限公司	PST3638UR	MITSUMI	23+	SOT	8560	受權(quán)代理!全新原裝現(xiàn)貨特價(jià)熱賣!	詢價(jià)
深圳市得捷芯城科技有限公司	PST3638UR	MITSUMI	23+	NA/	15250	原廠直銷,現(xiàn)貨供應(yīng),賬期支持!	詢價(jià)
深圳市科恒偉業(yè)電子有限公司	PST3638UR-TRB	MITSUMI	1822+	SOT-343	6852	只做原裝正品假一賠十為客戶做到零風(fēng)險(xiǎn)!!	詢價(jià)
瀚佳科技(深圳)有限公司	PST3638UR-TRB	MITSUMI	21+	SOT-343	65200	一級(jí)代理/放心采購	詢價(jià)

更多PST3636NR供應(yīng)商更新時(shí)間2024-11-15 15:47:00

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