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PTF211301A中文資料英飛凌數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

PTF211301A
廠(chǎng)商型號(hào)

PTF211301A

功能描述

LDMOS RF Power Field Effect Transistor 130 W, 2110-2170 MHz

文件大小

449.03 Kbytes

頁(yè)面數(shù)量

9 頁(yè)

生產(chǎn)廠(chǎng)商 Infineon Technologies AG
企業(yè)簡(jiǎn)稱(chēng)

Infineon英飛凌

中文名稱(chēng)

英飛凌科技股份公司官網(wǎng)

原廠(chǎng)標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

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更新時(shí)間

2024-12-26 18:08:00

PTF211301A規(guī)格書(shū)詳情

Description

The PTF211301 is a 130–W, internally matched GOLDMOS FET intended for WCDMA applications. It is characaterized for single– and two–carrier WCDMA operation from 2110 to 2170 MHz. Full gold metallization ensures excellent device lifetime and reliability.

Features

? Broadband internal matching

? Typical two–carrier WCDMA performance at

2140 MHz

- Average output power = 28 W

- Linear Gain = 13.5 dB

- Efficiency = 25

- Intermodulation distortion = –37 dBc

- Adjacent channel power = –42 dBc

? Typical CW performance, 2170 MHz, 28 V

- Output power at P–1dB = 148 W

- Efficiency = 50

? Integrated ESD protection: Human Body

Model, Class 1 (minimum)

? Excellent thermal stability, low HCI drift

? Capable of handling 10:1 VSWR @ 28 V,

130 W (CW) output power

產(chǎn)品屬性

  • 型號(hào):

    PTF211301A

  • 制造商:

    INFINEON

  • 制造商全稱(chēng):

    Infineon Technologies AG

  • 功能描述:

    LDMOS RF Power Field Effect Transistor 130 W, 2110-2170 MHz

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高頻管
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4500
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5989
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3886
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