PTFA220121M

High Power RF LDMOS Field Effect Transistor 12 W, 700-2200 MHz

Description ThePTFA220121Misanunmatched12-wattLDMOSFETintendedforpoweramplifierapplicationsinthe700to2200MHz.ThisLDMOSdeviceoffersexcellentgain,efficiencyandlinearityperformanceinasmallovermoldedplasticpackage. Features ?Typicaltwo-carrierWCDMAperformance

PTFA220121M

High Power RF LDMOS Field Effect Transistor 12 W, 28 V, 700 ??2200 MHz

Description ThePTFA220121Misanunmatched12-wattLDMOSFETintendedforpoweramplifierapplicationsinthe700to2200MHz.ThisLDMOSdeviceoffersexcellentgain,efficiencyandlinearityperformanceinasmallovermoldedplasticpackage. Features ?Typicaltwo-carrierWCDMAperformancea

PTFA220121M

High Power RF LDMOS Field Effect Transistor 12 W, 28 V, 700 ??2200 MHz

PTFA220121M_15

High Power RF LDMOS Field Effect Transistor 12 W, 28 V, 700 ??2200 MHz

PTFA220121MV4R1K

High Power RF LDMOS Field Effect Transistor 12 W, 28 V, 700 ??2200 MHz

PTFA220121MV4R1KV4XUMA1

High Power RF LDMOS Field Effect Transistor 12 W, 28 V, 700 ??2200 MHz

PTFA220121M-V4

Package：10-LDFN 裸露焊盤；包裝：散裝 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - FET，MOSFET - 射頻 描述：FET RF LDMOS 10W SON10

PTFA220121M-V4-R1K

包裝：卷帶（TR） 類別：分立半導(dǎo)體產(chǎn)品 晶體管 - FET，MOSFET - 射頻 描述：RF MOSFET TRANSISTORS