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RFD12N06

60VN-ChannelMOSFET

Features ?UltraLowOn-Resistance -RDS(ON)

UMWGuangdong Youtai Semiconductor Co., Ltd.

友臺(tái)半導(dǎo)體廣東友臺(tái)半導(dǎo)體有限公司

RFD12N06LESM

N-Channel60-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

RFD12N06RLE

17A,60V,0.071Ohm,N-Channel,LogicLevelUltraFETPowerMOSFET

Features ?UltraLowOn-Resistance -rDS(ON)=0.063?,VGS=10V -rDS(ON)=0.071?,VGS=5V ?SimulationModels -TemperatureCompensatedPSPICE?andSABER? ElectricalModels -SpiceandSABER?ThermalImpedanceModels -www.fairchildsemi.com ?PeakCurrentvsPulse

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

RFD12N06RLE

12A,60V,0.135Ohm,N-Channel,LogicLevel,PowerMOSFETs

TheseN-ChannellogiclevelESDprotectedpowerMOSFETsaremanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforusewithlogic

Intersil

Intersil Corporation

RFD12N06RLESM

N-Channel60-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺(tái)灣)有限公司

RFD12N06RLESM

17A,60V,0.071Ohm,N-Channel,LogicLevelUltraFETPowerMOSFET

Features ?UltraLowOn-Resistance -rDS(ON)=0.063?,VGS=10V -rDS(ON)=0.071?,VGS=5V ?SimulationModels -TemperatureCompensatedPSPICE?andSABER? ElectricalModels -SpiceandSABER?ThermalImpedanceModels -www.fairchildsemi.com ?PeakCurrentvsPulse

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

RFD12N06RLESM

12A,60V,0.135Ohm,N-Channel,LogicLevel,PowerMOSFETs

TheseN-ChannellogiclevelESDprotectedpowerMOSFETsaremanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforusewithlogic

Intersil

Intersil Corporation

RFP12N06

17A,60V,0.071Ohm,N-Channel,LogicLevelUltraFETPowerMOSFET

Features ?UltraLowOn-Resistance -rDS(ON)=0.063?,VGS=10V -rDS(ON)=0.071?,VGS=5V ?SimulationModels -TemperatureCompensatedPSPICE?andSABER? ElectricalModels -SpiceandSABER?ThermalImpedanceModels -www.fairchildsemi.com ?PeakCurrentvsPulse

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

RFP12N06RLE

12A,60V,0.135Ohm,N-Channel,LogicLevel,PowerMOSFETs

TheseN-ChannellogiclevelESDprotectedpowerMOSFETsaremanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforusewithlogic

Intersil

Intersil Corporation

RFP12N06RLE

17A,60V,0.071Ohm,N-Channel,LogicLevelUltraFETPowerMOSFET

Features ?UltraLowOn-Resistance -rDS(ON)=0.063?,VGS=10V -rDS(ON)=0.071?,VGS=5V ?SimulationModels -TemperatureCompensatedPSPICE?andSABER? ElectricalModels -SpiceandSABER?ThermalImpedanceModels -www.fairchildsemi.com ?PeakCurrentvsPulse

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

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更多PTS12N06NS供應(yīng)商 更新時(shí)間2025-2-3 14:00:00