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PTS7H2201HKR/EM

TPS7H2201-SP and TPS7H2201-SEP Radiation Hardened 1.5-V to 7-V, 6-A eFuse

1Features ?Standardmicrocircuitavailable,SMD 5962R17220 ?Vendoritemdrawingavailable,VIDV62/23608 ?Radiationperformance: –Radiationhardnessassurance(RHA)uptoTID 100krad(Si) –Singleeventlatchup(SEL),singleevent burnout(SEB),andsingleeventgaterupture (SEGR)

TI1Texas Instruments(TI)

德州儀器德州儀器 (TI)

PTS7H2201HKR/EM

TPS7H2201-SP and TPS7H2201-SEP Radiation Hardened 1.5V to 7V, 6A eFuse

1Features ?Standardmicrocircuitavailable,SMD 5962R17220 ?Vendoritemdrawingavailable,VIDV62/23608 ?Radiationperformance: –Radiationhardnessassurance(RHA)uptoTID 100krad(Si) –Singleeventlatchup(SEL),singleevent burnout(SEB),andsingleeventgaterupture (SEGR)i

TI1Texas Instruments(TI)

德州儀器德州儀器 (TI)

TPS7H2201

TPS7H2211-SPandTPS7H2211-SEPRadiation-Hardness-Assured(RHA)14V,3.5AeFuse

1Features ?Totalionizingdose(TID)characterizedto 100krad(Si) –Radiationhardnessassuranceavailabilityof 100krad(Si) ?Single-eventeffects(SEE)characterized –Single-eventlatchup(SEL),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immunetolinearenergyt

TI1Texas Instruments(TI)

德州儀器德州儀器 (TI)

TPS7H2201

TPS7H2211-SPandTPS7H2211-SEPRadiation-Hardness-Assured(RHA)14-V,3.5-AeFuse

1Features ?Totalionizingdose(TID)characterizedto100 krad(Si) –Radiationhardnessassuranceavailabilityof 100krad(Si) ?Single-eventeffects(SEE)characterized –Single-eventlatchup(SEL),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immunetolinearenergy

TI1Texas Instruments(TI)

德州儀器德州儀器 (TI)

TPS7H2201EVM-CVAL

TPS7H2201-SPandTPS7H2201-SEPRadiationHardened1.5-Vto7-V,6-AeFuse

1Features ?Standardmicrocircuitavailable,SMD 5962R17220 ?Vendoritemdrawingavailable,VIDV62/23608 ?Radiationperformance: –Radiationhardnessassurance(RHA)uptoTID 100krad(Si) –Singleeventlatchup(SEL),singleevent burnout(SEB),andsingleeventgaterupture (SEGR)

TI1Texas Instruments(TI)

德州儀器德州儀器 (TI)

TPS7H2201EVM-CVAL

TPS7H2201-SPandTPS7H2201-SEPRadiationHardened1.5Vto7V,6AeFuse

1Features ?Standardmicrocircuitavailable,SMD 5962R17220 ?Vendoritemdrawingavailable,VIDV62/23608 ?Radiationperformance: –Radiationhardnessassurance(RHA)uptoTID 100krad(Si) –Singleeventlatchup(SEL),singleevent burnout(SEB),andsingleeventgaterupture (SEGR)i

TI1Texas Instruments(TI)

德州儀器德州儀器 (TI)

TPS7H2201EVM-CVAL

TPS7H2201-SPRadiationHardened1.5-Vto7-V,6-ALoadSwitch

1Features 1?Radiationperformance: –Radiationhardnessassurance(RHA)upto TID100krad(Si) –Singleeventlatchup(SEL),singleevent burnout(SEB),andsingleeventgaterupture (SEGR)immunetoLET=75MeV-cm2/mg –SEFI/SETcharacterizedto LET=75MeV-cm2/mg ?Integratedsingle

TITexas Instruments

德州儀器美國德州儀器公司

TPS7H2201HKR/EM

TPS7H2201-SPandTPS7H2201-SEPRadiationHardened1.5Vto7V,6AeFuse

1Features ?Standardmicrocircuitavailable,SMD 5962R17220 ?Vendoritemdrawingavailable,VIDV62/23608 ?Radiationperformance: –Radiationhardnessassurance(RHA)uptoTID 100krad(Si) –Singleeventlatchup(SEL),singleevent burnout(SEB),andsingleeventgaterupture (SEGR)i

TI1Texas Instruments(TI)

德州儀器德州儀器 (TI)

TPS7H2201HKR/EM

RadiationHardened1.5-Vto7-V,6-ALoadSwitch

TI1Texas Instruments(TI)

德州儀器德州儀器 (TI)

TPS7H2201HKR/EM

RadiationHardened1.5-Vto7-V,6-ALoadSwitch

TI1Texas Instruments(TI)

德州儀器德州儀器 (TI)

TPS7H2201HKR/EM

TPS7H2201-SPRadiationHardened1.5-Vto7-V,6-ALoadSwitch

1Features 1?Radiationperformance: –Radiationhardnessassurance(RHA)upto TID100krad(Si) –Singleeventlatchup(SEL),singleevent burnout(SEB),andsingleeventgaterupture (SEGR)immunetoLET=75MeV-cm2/mg –SEFI/SETcharacterizedto LET=75MeV-cm2/mg ?Integratedsingle

TITexas Instruments

德州儀器美國德州儀器公司

TPS7H2201HKR/EM

TPS7H2201-SPandTPS7H2201-SEPRadiationHardened1.5-Vto7-V,6-AeFuse

1Features ?Standardmicrocircuitavailable,SMD 5962R17220 ?Vendoritemdrawingavailable,VIDV62/23608 ?Radiationperformance: –Radiationhardnessassurance(RHA)uptoTID 100krad(Si) –Singleeventlatchup(SEL),singleevent burnout(SEB),andsingleeventgaterupture (SEGR)

TI1Texas Instruments(TI)

德州儀器德州儀器 (TI)

TPS7H2201MDAPTSEP

TPS7H2201-SPandTPS7H2201-SEPRadiationHardened1.5-Vto7-V,6-AeFuse

1Features ?Standardmicrocircuitavailable,SMD 5962R17220 ?Vendoritemdrawingavailable,VIDV62/23608 ?Radiationperformance: –Radiationhardnessassurance(RHA)uptoTID 100krad(Si) –Singleeventlatchup(SEL),singleevent burnout(SEB),andsingleeventgaterupture (SEGR)

TI1Texas Instruments(TI)

德州儀器德州儀器 (TI)

TPS7H2201-SEP

TPS7H2201-SPandTPS7H2201-SEPRadiationHardened1.5Vto7V,6AeFuse

1Features ?Standardmicrocircuitavailable,SMD 5962R17220 ?Vendoritemdrawingavailable,VIDV62/23608 ?Radiationperformance: –Radiationhardnessassurance(RHA)uptoTID 100krad(Si) –Singleeventlatchup(SEL),singleevent burnout(SEB),andsingleeventgaterupture (SEGR)i

TI1Texas Instruments(TI)

德州儀器德州儀器 (TI)

TPS7H2201-SEP

TPS7H2201-SPandTPS7H2201-SEPRadiationHardened1.5-Vto7-V,6-AeFuse

1Features ?Standardmicrocircuitavailable,SMD 5962R17220 ?Vendoritemdrawingavailable,VIDV62/23608 ?Radiationperformance: –Radiationhardnessassurance(RHA)uptoTID 100krad(Si) –Singleeventlatchup(SEL),singleevent burnout(SEB),andsingleeventgaterupture (SEGR)

TI1Texas Instruments(TI)

德州儀器德州儀器 (TI)

TPS7H2201-SEP

TPS7H2211-SPRadiation-Hardness-Assured(RHA)14-V,3.5-AeFuse

1Features ?Totalionizingdose(TID)characterizedto100 krad(Si) –Radiationhardnessassuranceavailabilityof 100krad(Si) ?Single-eventeffects(SEE)characterized –Single-eventlatchup(SEL),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immunetolinearenergy

TITexas Instruments

德州儀器美國德州儀器公司

TPS7H2201-SP

TPS7H2201-SPandTPS7H2201-SEPRadiationHardened1.5Vto7V,6AeFuse

1Features ?Standardmicrocircuitavailable,SMD 5962R17220 ?Vendoritemdrawingavailable,VIDV62/23608 ?Radiationperformance: –Radiationhardnessassurance(RHA)uptoTID 100krad(Si) –Singleeventlatchup(SEL),singleevent burnout(SEB),andsingleeventgaterupture (SEGR)i

TI1Texas Instruments(TI)

德州儀器德州儀器 (TI)

TPS7H2201-SP

TPS7H2201-SPandTPS7H2201-SEPRadiationHardened1.5-Vto7-V,6-AeFuse

1Features ?Standardmicrocircuitavailable,SMD 5962R17220 ?Vendoritemdrawingavailable,VIDV62/23608 ?Radiationperformance: –Radiationhardnessassurance(RHA)uptoTID 100krad(Si) –Singleeventlatchup(SEL),singleevent burnout(SEB),andsingleeventgaterupture (SEGR)

TI1Texas Instruments(TI)

德州儀器德州儀器 (TI)

TPS7H2201-SP

TPS7H2201-SPRadiationHardened1.5-Vto7-V,6-ALoadSwitch

1Features 1?Radiationperformance: –Radiationhardnessassurance(RHA)upto TID100krad(Si) –Singleeventlatchup(SEL),singleevent burnout(SEB),andsingleeventgaterupture (SEGR)immunetoLET=75MeV-cm2/mg –SEFI/SETcharacterizedto LET=75MeV-cm2/mg ?Integratedsingle

TITexas Instruments

德州儀器美國德州儀器公司

TPS7H2201-SP

TPS7H2211-SPRadiation-Hardness-Assured(RHA)14-V,3.5-AeFuse

1Features ?Totalionizingdose(TID)characterizedto100 krad(Si) –Radiationhardnessassuranceavailabilityof 100krad(Si) ?Single-eventeffects(SEE)characterized –Single-eventlatchup(SEL),single-event burnout(SEB),andsingle-eventgaterupture (SEGR)immunetolinearenergy

TITexas Instruments

德州儀器美國德州儀器公司

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