PUCC28C51QDRQ1中文資料德州儀器數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

1 Features

? AEC-Q100 qualified with the following results:

– Device temperature grade 1: -40?C to 125?C

– Device HBM classification level 2: ±2 kV

– Device CDM classification level C4B: 750 V

? Functional Safety-Capable

– Documentation available to aid functional safety

system design

? 28-V VDD recommended max operating ratings

? Undervoltage lockout options

– Si and SiC MOSFET applications

? Operating frequency: 1 MHz

? 50-μA standby current, 75-μA maximum

? Low operating current of 1.3 mA at 52 kHz

? Fast 35-ns cycle-by-cycle over-current limiting

? ±1-A peak driving current

? Rail-to-rail output swings with 25-ns rise and 20-ns

fall times

? ±1 initial trimmed 2.5-V error amplifier reference

? Pin-to-pin compatible to UCC28C4x-Q1 and dropin

substitution

2 Applications

? OBC and DC/DC converter isolated bias power

supply

? Traction inverter HV to LV backup supply

? HVAC compressor HV isolated power supply

? Single-ended DC converters in AC and DC EV

charging equipment isolated power supply

3 Description

The UCC28C5x-Q1 family of devices are high

performance current-mode PWM controllers helping

both Si and SiC MOSFETs applications. The

UCC28C5x-Q1 family has six VDD UVLO options,

with VDD abs max extended to 30 V, and reduced

startup and operation currents. The UCC28C5x-Q1

family provides improved version of UCC28C4x-

Q1. The table below shows the comparison. The

UCC28C5x-Q1 family is offered in the 8-pin SOIC (D)

package.