PUCC5880QDFCQ1中文資料德州儀器數(shù)據(jù)手冊PDF規(guī)格書

1 Features

? Dual output split driver with on-the-fly

programmable drive strength

– ±15-A and ±5-A drive current outputs

– Digital input pins (GD*) for drive strength

adjustment without SPI

– 3 resistor settings R1, R2, or R1||R2

– Integrated 4-A active Miller clamp or optional

external drive for Miller clamp transistor

? Primary and secondary side active short circuit

(ASC) support

? Internal and external supply under-voltage and

over-voltage protection

? Driver die temperature sensing and over

temperature protection

? Short-circuit protection:

– 75-ns response time to over-current event

– DESAT protection – selections up to 14 V

– Shunt resistor based over-current protection

– Configurable protection threshold values and

blanking times

– Programmable soft turnoff (STO) and two-level

soft turnoff (2STO) current

? Integrated 10-bit ADC

– Power switch temperature, driver die

temperature, DESAT pin voltage, VCC2

voltage, phase current, DC Link voltage

– Programmable digital comparators

? Advanced VCE/VDS clamping circuit

? Functional Safety-Compliant

– Developed for functional safety applications

– Documentation available to aid ISO 26262

system design up to ASIL D

? Integrated diagnostics:

– Built in self-test (BIST) for protection

comparators

– Gate threshold voltage measurement for power

device health monitoring

– INP to transistor gate path integrity

– Internal clock monitoring

– Fault alarm and warning outputs (nFLT*)

– ISO communication data integrity check

? SPI based device reconfiguration, verification,

supervision, and diagnosis

? 100 kV/μs CMTI

? Safety-related certifications:

– 5-kVRMS isolation for 1 minute per UL1577

(planned)

– Reinforced isolation 7070-VPK per DIN VDE

0884-11: 2017-01 (planned)

? AEC-Q100 qualified with the following results:

? – Device temperature grade 1: -40°C to +125°C

ambient operating temperature

– Device HBM ESD classification level 2

– Device CDM ESD classification level C4B

2 Applications

? EV and HEV traction inverter

? EV and HEV power modules

3 Description

The UCC5880-Q1 device is an isolated, highly

configurable adjustable slew-rate gate driver targeted

to drive high power SiC MOSFETs and IGBTs in

EV/HEV applications. Power transistor protections

such as shunt resistor based over-current, overtemperature

(PTC, NTC, or diode), and DESAT

detection, including selectable soft turn-off or twolevel

soft turn-off during these faults. To further reduce

the application size, the UCC5880-Q1 integrates an

active Miller clamp, and an active gate pull-down

while the driver is unpowered. An integrated 10-bit

ADC enables monitoring of up to 2 analog inputs,

VCC2, DESAT, and the gate driver temperature

for enhanced system management. Diagnostics and

detection functions are integrated to simplify the

design of ASIL compliant systems. The parameters

and thresholds for these features are configurable

using the SPI, which allows the device to be used with

nearly any SiC MOSFET or IGBT.