首頁 >PVA3055NPBF>規(guī)格書列表

零件編號下載&訂購功能描述制造商&上傳企業(yè)LOGO

PVA3055NPBF

Microelectronic Power IC HEXFET? Power MOSFET Photovoltaic Relay Single-Pole, Normally-Open 0-300V AC/DC, 50mA

IRF

International Rectifier

PVA3055NPBF

包裝:管件 封裝/外殼:8-DIP(0.300",7.62mm),4 引線 類別:繼電器 固態(tài)繼電器 描述:SSR RELAY SPST-NO 50MA 0-300V

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

PVA3055NPBF

包裝:管件 封裝/外殼:8-DIP(0.300",7.62mm),4 引線 類別:繼電器 固態(tài)繼電器 描述:SSR RELAY SPST-NO 50MA 0-300V

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

PVA3055NS

MicroelectronicPowerICHEXFETPowerMOSFETPhotovoltaicRelaySingle-Pole,Normally-Open0-300VAC/DC,50mA

IRF

International Rectifier

PVA3055NSPBF

MicroelectronicPowerICHEXFET?PowerMOSFETPhotovoltaicRelaySingle-Pole,Normally-Open0-300VAC/DC,50mA

IRF

International Rectifier

QPA3055P

100WS-BandGaNPowerAmplifier

QORVO

Qorvo, Inc

RCA3055

SILICONN-P-NVERSAWATTTRANSISTORS

SILICONN-P-NVERSAWATTTRANSISTORS DesignedforMedium-PowerLinearandSwitchingServiceinConsumer,Automotive,andIndustrialApplications

GESS

GE Solid State

RCA3055

SILICONN-P-NVERSAWATTTRANSISTORS

High-Current,SiliconN-P-NVERSAWATTTransistors

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

RFD3055

12A,60V,0.150Ohm,N-ChannelPowerMOSFETs

TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstandaspecifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuchas

Intersil

Intersil Corporation

RFD3055

11A,60V,0.107Ohm,LogicLevel,N-ChannelPowerMOSFETs

TheseN-Channelenhancement-modepowerMOSFETsaremanufacturedusingthelatestmanufacturingprocesstechnology.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapp

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

RFD3055

12A,60V,0.150Ohm,N-ChannelPowerMOSFETs

TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistors.TheyareadvancedpowerMOSFETsdesigned,tested,andguaranteedtowithstanda specifiedlevelofenergyinthebreakdownavalanchemodeofoperation.AllofthesepowerMOSFETsaredesignedforapplicationssuch

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

RFD3055

12A,60V,AvalancheRated,N-ChannelEnhancement-ModePowerMOSFETs(MegaFETs)

Description TheRFD3055,RFD3055SMandRFP3055N-ChannelpowerMOSFETsaremanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedfor

HARRIS

Harris Corporation

RFD3055LE

11A,60V,0.107Ohm,LogicLevel,N-ChannelPowerMOSFETs

TheseN-Channelenhancement-modepowerMOSFETsaremanufacturedusingthelatestmanufacturingprocesstechnology.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapp

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

RFD3055LE

11A,60V,0.107Ohm,LogicLevel,N-ChannelPowerMOSFETs

TheseN-Channelenhancement-modepowerMOSFETsaremanufacturedusingthelatestmanufacturingprocesstechnology.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapp

Intersil

Intersil Corporation

RFD3055LE

N-ChannelLogicLevelPowerMOSFET

TheseN-Channelenhancement-modepowerMOSFETsaremanufacturedusingthelatestmanufacturingprocesstechnology.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapp

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

RFD3055LE

N-Channel60V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導(dǎo)體微碧半導(dǎo)體(臺灣)有限公司

RFD3055LESM

11A,60V,0.107Ohm,LogicLevel,N-ChannelPowerMOSFETs

TheseN-Channelenhancement-modepowerMOSFETsaremanufacturedusingthelatestmanufacturingprocesstechnology.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapp

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

RFD3055LESM

11A,60V,0.107Ohm,LogicLevel,N-ChannelPowerMOSFETs

TheseN-Channelenhancement-modepowerMOSFETsaremanufacturedusingthelatestmanufacturingprocesstechnology.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapp

Intersil

Intersil Corporation

RFD3055LESM

N-ChannelLogicLevelPowerMOSFET

TheseN-Channelenhancement-modepowerMOSFETsaremanufacturedusingthelatestmanufacturingprocesstechnology.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapp

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

RFD3055LESM

N-channelEnhancementModePowerMOSFET

Features ?VDS=60V,ID=50A RDS(ON)

BychipBYCHIP ELECTRONICS CO., LIMITED

百域芯深圳市百域芯科技有限公司

產(chǎn)品屬性

  • 產(chǎn)品編號:

    PVA3055NPBF

  • 制造商:

    Infineon Technologies

  • 類別:

    繼電器 > 固態(tài)繼電器

  • 系列:

    PVA, HEXFET?

  • 包裝:

    管件

  • 安裝類型:

    通孔

  • 電路:

    SPST-NO(1 Form A)

  • 輸出類型:

    AC,DC

  • 電壓 - 輸入:

    1.2VDC

  • 端接樣式:

    PC 引腳

  • 封裝/外殼:

    8-DIP(0.300",7.62mm),4 引線

  • 供應(yīng)商器件封裝:

    8-dip 改進(jìn)型

  • 描述:

    SSR RELAY SPST-NO 50MA 0-300V

供應(yīng)商型號品牌批號封裝庫存備注價格
Infineon(英飛凌)
23+
SMD-8P
48902
正規(guī)渠道,大量現(xiàn)貨,只等你來。
詢價
原廠原包
24+
原裝
38560
原裝進(jìn)口現(xiàn)貨,工廠客戶可以放款。17377264928微信同
詢價
IR
2024+
N/A
70000
柒號只做原裝 現(xiàn)貨價秒殺全網(wǎng)
詢價
IR
17+
DIP4
6200
100%原裝正品現(xiàn)貨
詢價
IOR
2339+
NA
5989
公司原廠原裝現(xiàn)貨假一罰十!特價出售!強(qiáng)勢庫存!
詢價
IR
23+
DIP4
8650
受權(quán)代理!全新原裝現(xiàn)貨特價熱賣!
詢價
IR
2020+
DIP4
80000
只做自己庫存,全新原裝進(jìn)口正品假一賠百,可開13%增
詢價
International Rectifier
2022+
1
全新原裝 貨期兩周
詢價
Infineon
1931+
N/A
493
加我qq或微信,了解更多詳細(xì)信息,體驗(yàn)一站式購物
詢價
Infineon(英飛凌)
2112+
DIP8
105000
2000個/管一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長
詢價
更多PVA3055NPBF供應(yīng)商 更新時間2024-12-23 14:17:00