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PVB42004X中文資料飛利浦?jǐn)?shù)據(jù)手冊PDF規(guī)格書

PVB42004X
廠商型號

PVB42004X

功能描述

NPN microwave power transistor

文件大小

64.09 Kbytes

頁面數(shù)量

8

生產(chǎn)廠商 NXP Semiconductors
企業(yè)簡稱

Philips飛利浦

中文名稱

荷蘭皇家飛利浦官網(wǎng)

原廠標(biāo)識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2024-11-2 18:28:00

PVB42004X規(guī)格書詳情

DESCRIPTION

NPN silicon planar epitaxial microwave power transistor in a 2-lead rectangular flange package with a ceramic cap (SOT445A) with the common base connected to the flange.

FEATURES

? Interdigitated structure provides high emitter efficiency

? Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR

? Local thick oxide and gold sandwich metallization realizes very stable characteristics and excellent lifetime

? Multicell geometry gives good balance of dissipated power and low thermal resistance.

APPLICATIONS

? Intended for use in common base class-B power amplifiers up to 4.2 GHz.

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