零件編號 | 下載&訂購 | 功能描述 | 制造商&上傳企業(yè) | LOGO |
---|---|---|---|---|
NylonPCBSupports-ImperialSpacing | HeycoHeyco. ???/span> | Heyco | ||
InductiveSensor Features ■?6.5mm,smoothbarrel ■Stainlesssteel,1.4404 ■DC2-wire,nom.8.2VDC ■Outputacc.toDINEN60947-5-6(NAMUR) ■Cableconnection ■ATEXcategoryII1G,Exzone0 ■ATEXcategoryII1D,Exzone20 ■SIL2(LowDemandMode)acc.toIEC61508, PLcacc.toISO13849-1withHFT0 | TURCKTurck Inc. 圖爾克德國圖爾克集團(tuán)公司 | TURCK | ||
5.0ASURFACEMOUNTSCHOTTKYBARRIERDIODE | ZSELECZibo Seno Electronic Engineering Co.,Ltd 淄博圣諾電子淄博圣諾電子工程有限公司 | ZSELEC | ||
10050ExtremeCompatibleTransceiverSFP10/100/1000Base-T(RJ45,Copper,100m) Features ATGBICS10050SFPoperatesonstandardCategory5unshieldedtwisted-paircoppercablingoflinklengthsupto100m. Extreme1000BASE-TSFPmodulessupport10/100/1000autonegotiationandautoMDI/MDIX. OurproductmeetsthespecificationofExtreme10050=andweproudlyofferacompa | ATGBICS ATGBICS by Approved Technology | ATGBICS | ||
PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs. PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. ?FasterSwitching | ADPOW Advanced Power Technology | ADPOW | ||
PowerMOSVITMisanewgenerationoflowgatecharge,highvoltageN-ChannelenhancementmodepowerMOSFETs. PowerMOSVITMisanewgenerationoflowgatecharge,highvoltageN-ChannelenhancementmodepowerMOSFETs.LowergatechargeisachievedbyoptimizingthemanufacturingprocesstominimizeCissandCrss.LowergatechargecoupledwithPowerMOSVITMoptimizedgatelayout,deliversexceptionally | ADPOW Advanced Power Technology | ADPOW | ||
N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS N-CHANNELENHANCEMENTMODEHIGHVOLTAGEPOWERMOSFETS | ADPOW Advanced Power Technology | ADPOW | ||
PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs. | ADPOW Advanced Power Technology | ADPOW | ||
PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs. PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. ?FastRecoveryBody | ADPOW Advanced Power Technology | ADPOW | ||
PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs. PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. ?FasterSwitching | ADPOW Advanced Power Technology | ADPOW | ||
PowerMOSVITMisanewgenerationoflowgatecharge,highvoltage PowerMOSVITMisanewgenerationoflowgatecharge,highvoltageN-ChannelenhancementmodepowerMOSFETs.LowergatechargeisachievedbyoptimizingthemanufacturingprocesstominimizeCissandCrss.LowergatechargecoupledwithPowerMOSVITMoptimizedgatelayout,deliversexceptionally | ADPOW Advanced Power Technology | ADPOW | ||
PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs. | ADPOW Advanced Power Technology | ADPOW | ||
PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs. PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. ?IdenticalSpecific | ADPOW Advanced Power Technology | ADPOW | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=21A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.5Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCc | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
N-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=21A@TC=25℃ ·DrainSourceVoltage-VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.5Ω(Max)@VGS=10V APPLICATIONS ·MotorDrive,DC-DCConverter,PowerSwitch andSolenoidDrive. | ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司 | ISC | ||
PowerMOSVisanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs. PowerMOSV?isanewgenerationofhighvoltageN-ChannelenhancementmodepowerMOSFETs.ThisnewtechnologyminimizestheJFETeffect,increasespackingdensityandreducestheon-resistance.PowerMOSV?alsoachievesfasterswitchingspeedsthroughoptimizedgatelayout. ?FasterSwitching | ADPOW Advanced Power Technology | ADPOW | ||
10.3x10.3mmMax.square,5.0mmMax.height. | Toko TOKO, Inc | Toko | ||
ELECTROLYTIC-85?C | DUBILIER dubilier | DUBILIER | ||
SURFACEMOUNTSMD-105CLOWIMPEDANCEDVJL | DUBILIER dubilier | DUBILIER | ||
SMD-105?CLOWIMPEDANCE | DUBILIER dubilier | DUBILIER |
供應(yīng)商 | 型號 | 品牌 | 批號 | 封裝 | 庫存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
Panduit |
2022+ |
1 |
全新原裝 貨期兩周 |
詢價(jià) | |||
Panduit Corp |
2010+ |
N/A |
66 |
加我qq或微信,了解更多詳細(xì)信息,體驗(yàn)一站式購物 |
詢價(jià) | ||
NICHICON/尼吉康 |
23+ |
NA |
880000 |
明嘉萊只做原裝正品現(xiàn)貨 |
詢價(jià) | ||
TAICON |
23+ |
11200 |
原廠授權(quán)一級代理、全球訂貨優(yōu)勢渠道、可提供一站式BO |
詢價(jià) | |||
原廠 |
13+ |
IC |
1 |
普通 |
詢價(jià) | ||
PIXELWORKS |
212 |
QFP |
24 |
原裝現(xiàn)貨海量庫存歡迎咨詢 |
詢價(jià) | ||
PIXELWORKS |
QFP |
68500 |
一級代理 原裝正品假一罰十價(jià)格優(yōu)勢長期供貨 |
詢價(jià) | |||
IR |
22+ |
ATMEGA |
6000 |
終端可免費(fèi)供樣,支持BOM配單 |
詢價(jià) | ||
IR |
23+ |
ATMEGA |
8000 |
只做原裝現(xiàn)貨 |
詢價(jià) | ||
Eaton/ControlAutomation |
新 |
15 |
全新原裝 貨期兩周 |
詢價(jià) |
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