QJD1210007中文資料POWEREX數(shù)據(jù)手冊PDF規(guī)格書

Description:

Powerex Silicon Carbide MOSFET Modules are designed for use in high frequency application. Each module consists of two MOSFET Silicon Carbide Transistors in half-bridge configuration with each transistor having a reverse connected fast recovery free-wheel silicon carbide Schottky diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management.

Features:

□ Junction Temperature - 200°C

□ Silicon Carbide Chips

□ Industry Leading RDS(on)

□ High Speed Switching

□ Low Switching Losses

□ Low Capacitance

□ Low Drive Requirement

□ Fast 100A Free Wheeling Schottky Diode

□ High Power Density

□ Isolated Baseplate

□ Aluminum Nitride Ceramic

Applications:

□ High Frequency Power Supply

□ High Efficiency Inverter

□ High Temperature Environment