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TIP147

DarlingtonComplementarySiliconPowerTransistors

ONSEMION Semiconductor

安森美半導(dǎo)體安森美半導(dǎo)體公司

TIP147

MonolithicConstructionWithBuiltInBase-EmitterShuntResistors

Features ?MonolithicConstructionWithBuiltInBase-EmitterShuntResistors ?HighDCCurrentGain:hFE=1000@VCE=-4V,IC=-5A(Min.) ?IndustrialUse ?ComplementtoTIP140/141/142

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

TIP147

PNPSILICONPOWERDARLINGTONS

●DesignedforComplementaryUsewithTIP140,TIP141andTIP142 ●125Wat25°CCaseTemperature ●10AContinuousCollectorCurrent ●MinimumhFEof1000at4V,5A

POINN

Power Innovations Ltd

TIP147

10AMPEREDARLINGTONCOMPLEMENTARYSILICONPOWERTRANSISTORS

TIP140,TIP141,TIP142-->NPN TIP145,TIP146,TIP147--->PNP ...designedforgeneral–purposeamplifierandlowfrequencyswitchingapplications. ?HighDCCurrentGain—MinhFE=1000@IC=5A,VCE=4V ?Collector–EmitterSustainingVoltage—@30mA VCEO(sus)=60Vdc(Min)—TIP140,

MotorolaMotorola, Inc

摩托羅拉加爾文制造公司

TIP147

SILICONDARLINGTONTRANSISTORPNPEPITAXIAL(HIGHDCCURRENTGAIN)

HIGHDCCURRENTGAIN ?ComplementarytoTIP140/141/142

WINGSWing Shing Computer Components

永盛電子永盛電子(香港)有限公司

TIP147

PNPSILICONPOWERDARLINGTONS

●DesignedforComplementaryUsewithTIP140,TIP141andTIP142 ●125Wat25°CCaseTemperature ●10AContinuousCollectorCurrent ●MinimumhFEof1000at4V,5A

TRSYS

Transys Electronics

TIP147

COMPLEMENTARYSILICONPOWERDARLINGTONTRANSISTORS

DESCRIPTION TheTIP140,TIP141andTIP142aresiliconepitaxial-baseNPNpowertransistorsinmonolithicDarlingtonconfigurationandaremountedinTO-218plasticpackage.Theyareintentedforuseinpowerlinearandswitchingapplications. ThecomplementaryPNPtypesareTIP145,TIP146andTI

STMICROELECTRONICSSTMicroelectronics

意法半導(dǎo)體意法半導(dǎo)體集團(tuán)

TIP147

POWERTRANSISTORS(10A,60-100V,125W)

MOSPECMospec Semiconductor

統(tǒng)懋統(tǒng)懋半導(dǎo)體股份有限公司

TIP147

SILICONPLANARDARLINGTONPOWERTRANSISTORS

DesignedforGeneralPurposeAmplifierandLowFrequencySwitchingApplications TO-3PNNonIsolated PlasticPackage

CDIL

Continental Device India Limited

TIP147

PNPEpitaxialSiliconDarlingtonTransistor

Features ?MonolithicConstructionWithBuiltInBase-EmitterShuntResistors ?HighDCCurrentGain:hFE=1000@VCE=-4V,IC=-5A(Min.) ?IndustrialUse ?ComplementtoTIP140/141/142

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

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