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R07DS1344EJ0200規(guī)格書詳情
Description
The RBA160N04AHPF-4UA01 is N-channel MOS Field Effect Transistor designed for high current switching
applications.
Features
? Super low on-state resistance
RDS(on) = 1.25 m? MAX. ( VGS = 10 V, ID = 80A )
? Low input capacitance
Ciss = 8800pF TYP. ( VDS = 25 V )
? Designed for automotive application and AEC-Q101 qualified
? Pb-free (This product does not contain Pb in the external electrode)