R19DS0059EJ0330中文資料瑞薩數(shù)據(jù)手冊PDF規(guī)格書

Features

? All bridges can be controlled independently.

An ultra-fine CMOS process has been adopted for low power

consumption in a design with no charge-pump.

? Built-in H bridge of a full-swing drive 4 circuit

? Built-in low-voltage malfunction prevention circuit

? Power supply systems are all internally isolated and include

a function to prevent reverse current between power supplies.

? It is housed in a small package (24SSOP 6.5x6.4 mm t=1.0mm)