R1EV5801MB集成電路（IC）的存儲器規(guī)格書PDF中文資料

Description

Renesas Electronics’ R1EV5801MB is an electrically erasable and programmable ROM organized as 131072-word ? 8-

bit. It has realized high speed, low power consumption and high reliability by employing advanced MONOS memory

technology and CMOS process and circuitry technology. It also has a 128-byte page programming function to make the

write operations faster.

Features

? Single voltage supply: 2.7 V to 5.5 V

? Access time:

? 150 ns (max) at Vcc=4.5 V to 5.5 V

? 250 ns (max) at Vcc=2.7 V to 5.5 V

? Power dissipation

? Active: 20 mW/MHz, (typ)

? Standby: 110 ?W (max)

? On-chip latches: address, data, CE, OE, WE

? Automatic byte write: 10 ms (max)

? Automatic page write (128 bytes): 10 ms (max)

? Data polling and RDY/Busy

? Data protection circuit on power on/off

? Conforms to JEDEC byte-wide standard

? Reliable CMOS with MONOS cell technology

? 104

or more erase/write cycles

? 10 or more years data retention

? Software data protection

? Write protection by RES pin

? Temperature range: ?40 to +85?C

? There are lead free products.