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SGM2016

GaAsN-channelDual-GateMESFET

Description TheSGM2016AM/APisanN-channeldual-gateGaAsMESFETforUHF-bandlow-noiseamplification.ThisFETissuitableforawiderangeofapplicationsincludingUHFTVtuners,cellular/cordlessphone,andDBSIFamplifiers. Features ?Lowvoltageoperation ?LownoiseNF=1.2dB(typ.

SonySony Corporation

索尼

SGM2016AM

GaAsN-channelDual-GateMESFET

Description TheSGM2016AM/APisanN-channeldual-gateGaAsMESFETforUHF-bandlow-noiseamplification.ThisFETissuitableforawiderangeofapplicationsincludingUHFTVtuners,cellular/cordlessphone,andDBSIFamplifiers. Features ?Lowvoltageoperation ?LownoiseNF=1.2dB(typ.

SonySony Corporation

索尼

SGM2016AN

GaAsN-channelDual-GateMESFET

Description TheSGM2016ANisanN-channeldual-gateGaAsMESFETforUHF-bandlow-noiseamplification.ThisFETissuitableforawiderangeofapplicationsincludingUHFTVtuners,cellular/cordlessphone,andDBSIFamplifiers. Features ?Ultra-smallpackage ?Lowvoltageoperation ?Lowno

SonySony Corporation

索尼

SGM2016AP

GaAsN-channelDual-GateMESFET

Description TheSGM2016AM/APisanN-channeldual-gateGaAsMESFETforUHF-bandlow-noiseamplification.ThisFETissuitableforawiderangeofapplicationsincludingUHFTVtuners,cellular/cordlessphone,andDBSIFamplifiers. Features ?Lowvoltageoperation ?LownoiseNF=1.2dB(typ.

SonySony Corporation

索尼

SGM2016M

GaAsN-channelDual-GateMESFET

Description TheSGM2016M/PisanN-channeldual-gateGaAsMESFETforUHF-bandlow-noiseamplification.ThisFETissuitableforawiderangeofapplicationsincludingUHFTVtuners,cellularradio,andDBSIFamplifiers. Features ?Lowvoltageoperation ?LownoiseNF=1.2dB(typ.)at900MHz

SonySony Corporation

索尼

SGM2016P

GaAsN-channelDual-GateMESFET

Description TheSGM2016M/PisanN-channeldual-gateGaAsMESFETforUHF-bandlow-noiseamplification.ThisFETissuitableforawiderangeofapplicationsincludingUHFTVtuners,cellularradio,andDBSIFamplifiers. Features ?Lowvoltageoperation ?LownoiseNF=1.2dB(typ.)at900MHz

SonySony Corporation

索尼

SLG2016

X/YStackable0.180???4-Digit5x7DotMatrixAlphanumericIntelligentDisplay?DeviceswithMemory/Decoder/Driver

DESCRIPTION TheSLR/SLO/SLG/SLY2016isafourdigit5x7dotmatrixdisplaymodulewithabuilt-inCMOSintegratedcircuit.ThisdisplayisX/Ystackable. Theintegratedcircuitcontainsmemory,a128ASCIIROMdecoder,multiplexingcircuitryanddrivers.Dataentryisasynchronous.Adisplays

OSRAMOSRAM GmbH

艾邁斯歐司朗歐司朗光電半導(dǎo)體

SLG2016

AlphanumericIntelligentDisplayDEVICESWITHMEMORY/DECODER/DRIVER

DESCRIPTION TheSLR/SLO/SLG/SLY2016isafourdigit5x7dotmatrixdisplaymodulewithabuilt-inCMOSintegratedcircuit.ThisdisplayisX/Ystackable. Theintegratedcircuitcontainsmemory,a128ASCIIROMdecoder,multiplexingcircuitryanddrivers.Dataentryisasynchronous.Adisplays

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SLO2016

AlphanumericIntelligentDisplayDEVICESWITHMEMORY/DECODER/DRIVER

DESCRIPTION TheSLR/SLO/SLG/SLY2016isafourdigit5x7dotmatrixdisplaymodulewithabuilt-inCMOSintegratedcircuit.ThisdisplayisX/Ystackable. Theintegratedcircuitcontainsmemory,a128ASCIIROMdecoder,multiplexingcircuitryanddrivers.Dataentryisasynchronous.Adisplays

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SLO2016

X/YStackable0.180???4-Digit5x7DotMatrixAlphanumericIntelligentDisplay?DeviceswithMemory/Decoder/Driver

DESCRIPTION TheSLR/SLO/SLG/SLY2016isafourdigit5x7dotmatrixdisplaymodulewithabuilt-inCMOSintegratedcircuit.ThisdisplayisX/Ystackable. Theintegratedcircuitcontainsmemory,a128ASCIIROMdecoder,multiplexingcircuitryanddrivers.Dataentryisasynchronous.Adisplays

OSRAMOSRAM GmbH

艾邁斯歐司朗歐司朗光電半導(dǎo)體

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50000
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SMD20164P
7350
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RALTRON
2023+
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8800
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N/A
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更多R2016供應(yīng)商 更新時(shí)間2025-4-16 13:00:00