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RT9013

500mA,LowDropout,LowNoiseUltra-FastWithoutBypassCapacitorCMOSLDORegulator

GeneralDescription TheRT9013isahigh-performance,500mALDOregulator,offeringextremelyhighPSRRandultra-lowdropout.IdealforportableRFandwirelessapplicationswithdemandingperformanceandspacerequirements. Features WideOperatingVoltageRanges:2.2Vto5.5V Low

RichTekRichtek Technology Corporation

立锜科技股份有限公司

RT9013A

120mA,LowDropout,LowNoiseUltra-FastWithoutBypassCapacitorCMOSLDORegulator

GeneralDescription TheRT9013Aisahigh-performance,120mALDOregulator,offeringextremelyhighPSRRandultra-lowdropout.ThechipisidealforportableRFandwirelessapplicationswithdemandingperformanceandspacerequirements. Features WideOperatingVoltageRanges:2.2Vto

RichTekRichtek Technology Corporation

立锜科技股份有限公司

RT9013B

300mA,LowDropout,LowNoiseUltra-FastWithoutBypassCapacitorCMOSLDORegulator

GeneralDescription TheRT9013Bisahigh-performance,300mALDOregulator,offeringextremelyhighPSRRandultra-lowdropout.TheRT9013BisIdealforportableRFandwirelessapplicationswithdemandingperformanceandspacerequirements. Features ?WideOperatingVoltageRange:2.2Vto5.5

RichTekRichtek Technology Corporation

立锜科技股份有限公司

RT9013-CIPQV

500mA,LowDropout,LowNoiseUltra-FastWithoutBypassCapacitorCMOSLDORegulator

GeneralDescription TheRT9013isahigh-performance,500mALDOregulator,offeringextremelyhighPSRRandultra-lowdropout.IdealforportableRFandwirelessapplicationswithdemandingperformanceandspacerequirements. Features WideOperatingVoltageRanges:2.2Vto5.5V Low

RichTekRichtek Technology Corporation

立锜科技股份有限公司

S9013

NPNSiliconTransistor

AUK

AUK corp

S9013

NPNEPITAXIALPLANARTRANSISTOR

Description TheS9013isdesignedforusein1WoutputamplifierofportableradiosinclassBpush-pulloperation. Features ?HighTotalPowerDissipation.(PT:625mW) ?HighCollectorCurrent.(IC:500mA) ?ComplementarytoS9012 ?Excellentlinearity.

TGS

Tiger Electronic Co.,Ltd

S9013

GeneralPurposeTransistor

FEATURES Powerdissipation PCM:0.3W CollectorCurrent ICM:0.5A Collector-basevoltage V(BR)CBO:40V Operating&storagejunctiontemperature Tj,Tstg:-55°C~+150°C

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

S9013

PLASTICENCAPSULATETRANSISTORS

[SHENZHENSLSTECHNOLOGYCO.,LTD.] Features: PCandICarelarger,hFElinearityisgood; Applications: Usedinpoweramplifiercircuit,complementarytoS9012.

ETCList of Unclassifed Manufacturers

未分類制造商

S9013

1WOutputAmplifierofPotableRadiosinClassBPush-pullOperation.

1WOutputAmplifierofPotableRadiosinClassBPush-pullOperation. ?Hightotalpowerdissipation.(PT=625mW) ?HighCollectorCurrent.(IC=500mA) ?ComplementarytoSS9012 ?ExcellenthFElinearity.

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

S9013

NPNSiliconEpitaxialPlanarTransistor

FEATURES ●HighCollectorCurrent.(IC=500mA） ●ComplementaryToS9012. ●ExcellentHFELinearity. ●Powerdissipation.(PC=300mW) APPLICATIONS ●HighCollectorCurrent.

BILINChangzhou Galaxy Century Microelectronics Co.,Ltd.

銀河微電常州銀河世紀微電子股份有限公司

S9013

TRANSISTOR(NPN)

TRANSISTOR(NPN) FEATURES ●ComplementarytoS9012 ●ExcellenthFElinearity

HTSEMIShenzhen Jin Yu Semiconductor Co., Ltd.

金譽半導(dǎo)體深圳市金譽半導(dǎo)體股份有限公司

S9013

TO-92Plastic-EncapsulateTransistors

FEATURE ComplementarytoS9012 ExcellenthFElinearity

DAYADaya Electric Group Co., Ltd.

大亞電器集團大亞電器集團有限公司

S9013

NPNSiliconEpitaxialPlanarTransistor

FEATURES ●HighCollectorCurrent.(IC=500mA） ●ComplementaryToS9012. ●ExcellentHFELinearity. ●Powerdissipation.(PC=300mW) APPLICATIONS ●HighCollectorCurrent.

DSK

Diode Semiconductor Korea

S9013

NPNSILICONEPITAXIALPLANARTRANSISTOR

Features ?HighCollectorCurrent.(IC=500mA） ?ComplementaryToS9012. ?ExcellentHFELinearity. ?Powerdissipation.(PC=300mW)

SUNMATESUNMATE electronic Co., LTD

森美特森美特半導(dǎo)體股份有限公司

S9013

SOT-23Plastic-EncapsulateTransistors

TRANSISTOR(NPN) FEATURES ●HighCollectorCurrent. ●ComplementarytoS9012. ●ExcellenthFELinearity.

JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd

長電科技江蘇長電科技股份有限公司

S9013

TRANSISTOR(NPN)

KOOCHIN

SHENZHEN KOO CHIN ELECTRONICS CO., LTD.

S9013

TRANSISTOR(NPN)

FEATURE Powerdissipation PCM:0.625W(Tamb=25℃) Collectorcurrent ICM:0.5A Collector-basevoltage V(BR)CBO:40V Operatingandstoragejunctiontemperaturerange Tj,Tstg:-55℃to+150℃

WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD

永而佳實業(yè)深圳市永而佳實業(yè)有限公司

S9013

NPNSiliconEpitaxialPlanarTransistor

NPNSiliconEpitaxialPlanarTransistor forswitchingandamplifierapplications.Especially suitableforAF-driverstagesandlowpoweroutput stages. Thetransistorissubdividedintothreegroups,G, HandI,accordingtoitsDCcurrentgain.As complementarytypethePNPtransistor9012

DGNJDZNanjing International Group Co

南晶電子東莞市南晶電子有限公司

S9013

Plastic-EncapsulateTransistors

Plastic-EncapsulateTransistors FEATURES ComplimentarytoS9012

HOTTECHGuangdong Hottech Co. Ltd.

合科泰深圳市合科泰電子有限公司

S9013

NPNSiliconEpitaxialPlanarTransistor

BILINChangzhou Galaxy Century Microelectronics Co.,Ltd.

銀河微電常州銀河世紀微電子股份有限公司

詳細參數(shù)

  • 型號：

    R9013R

  • 制造商：

    Conxall

  • 功能描述：

    6280-2PG-3DCW

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Essentra
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OEC
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30
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Richco
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1
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6000
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IR
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8000
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更多R9013R供應(yīng)商 更新時間2025-1-11 10:08:00

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