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RA35H1516M中文資料三菱電機(jī)數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

RA35H1516M
廠商型號(hào)

RA35H1516M

功能描述

154-162MHz 40W 12.5V MOBILE RADIO

文件大小

75.86 Kbytes

頁(yè)面數(shù)量

8 頁(yè)

生產(chǎn)廠商 Mitsubishi Electric Semiconductor
企業(yè)簡(jiǎn)稱

Mitsubishi三菱電機(jī)

中文名稱

三菱電機(jī)株式會(huì)社官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-1-27 9:12:00

RA35H1516M規(guī)格書(shū)詳情

DESCRIPTION

The RA35H1516M is a 40-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 154- to 162-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 4V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 4.5V (typical) and 5V (maximum). At VGG=5V, the typical gate current is 1 mA.

FEATURES

? Enhancement-Mode MOSFET Transistors (IDD?0 @ VDD=12.5V, VGG=0V)

? Pout>40W, ηT>50 @ VDD=12.5V, VGG=5V, Pin=50mW

? Low-Power Control Current IGG=1mA (typ) at VGG=5V

? Module Size: 66 x 21 x 9.88 mm

? Linear operation is possible by setting the quiescent drain current with

the gate voltage and controlling the output power with the input power

產(chǎn)品屬性

  • 型號(hào):

    RA35H1516M

  • 制造商:

    MITSUBISHI

  • 制造商全稱:

    Mitsubishi Electric Semiconductor

  • 功能描述:

    154-162MHz 40W 12.5V MOBILE RADIO

供應(yīng)商 型號(hào) 品牌 批號(hào) 封裝 庫(kù)存 備注 價(jià)格
TAKAMISA
23+
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MITSUBI
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