首頁>RA80H1415M1>規(guī)格書詳情

RA80H1415M1中文資料三菱電機數(shù)據(jù)手冊PDF規(guī)格書

RA80H1415M1
廠商型號

RA80H1415M1

功能描述

RoHS Compliance ,144-148MHz 80W, 136-174MHz 60W 12.5V, 2 Stage Amp. For MOBILE RADIO

文件大小

314.35 Kbytes

頁面數(shù)量

11

生產(chǎn)廠商 Mitsubishi Electric Semiconductor
企業(yè)簡稱

Mitsubishi三菱電機

中文名稱

三菱電機株式會社官網(wǎng)

原廠標(biāo)識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2024-12-23 13:30:00

RA80H1415M1規(guī)格書詳情

DESCRIPTION

The RA80H1415M1 is a 80-watt RF MOSFET Amplifier Module

for 12.5-volt mobile radios that operate in the 144- to 148-MHz

range.

The battery can be connected directly to the drain of the

enhancement-mode MOSFET transistors. The output power and

drain current increase as the gate voltage increases. With a gate

voltage around 4V (minimum), output power and drain current

increases substantially. The nominal output power becomes

available at 4.5V (typical) and 5V (maximum). At VGG=5V, the

typical gate current is 1 mA.

This module is designed for non-linear FM modulation, but may

also be used for linear modulation by setting the drain quiescent

current with the gate voltage and controlling the output power with

the input power.

FEATURES

? Enhancement-Mode MOSFET Transistors

(IDD?0 @ VDD=12.5V, VGG=0V)

? Pout>80W, ?T>50 @f=144-148MHz,

Pout>60W, ?T>50 @ f=136-174MHz,

VDD=12.5V, VGG=5V, Pin=50mW

? Broadband Frequency Range: 136-174MHz

? Low-Power Control Current IGG=1mA (typ) at VGG=5V

? Module Size: 67 x 19.4 x 9.9 mm

供應(yīng)商 型號 品牌 批號 封裝 庫存 備注 價格
MITSUBISH
2023+
H2M
80000
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品
詢價
MITSUBISH
23+
SOT89
20000
原廠原裝正品現(xiàn)貨
詢價
MITSUBISHI/三菱
23+
H2M
89630
當(dāng)天發(fā)貨全新原裝現(xiàn)貨
詢價
Raytheon
2023+
PLCC44
50000
原裝現(xiàn)貨
詢價
MITSUBISHI/三菱
2021+
3000
十年專營原裝現(xiàn)貨,假一賠十
詢價
RAYTHEON
24+
SOP
6868
原裝現(xiàn)貨,可開13%稅票
詢價
FSC
2020+
SOP-24
80000
只做自己庫存,全新原裝進口正品假一賠百,可開13%增
詢價
JOONGWON
23+
11200
原廠授權(quán)一級代理、全球訂貨優(yōu)勢渠道、可提供一站式BO
詢價
FAN
2020+
SOP
350000
100%進口原裝正品公司現(xiàn)貨庫存
詢價
24+
SOP
7500
絕對原裝自家現(xiàn)貨!真實庫存!歡迎來電!
詢價