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SCS411SDF

SmallSignalSchottkyBarrierDiode

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

SD411

N-ChannelEnhancementModeDualDMOSFET

DESCRIPTION TheSD411isconstructedutilizingCalogic’shighspeedlateralDMOStechniquesfeaturingtightmatchingcharacteristicsbetweeneachFET.Thisdeviceisanexcellentchoiceforinstrumentation,communication,RFandVideodesigns. FEATURES ?NormallyOFFConfiguration ?

Calogic

Calogic, LLC

SDP411D

BandswitchingDiode

Features ?Extremelysmallsizepackage:1.7×1.2×0.9㎜Typ. ?VHFtunerbandswitchapplications. ?VeryLowseriesresistance:rS=Typ0.5Ω@IF=2mA ?Lowtotalcapacitance:CT=1.2pF(Max.)

AUK

AUK corp

SDP411D

BandswitchingDiode

Features ?Extremelysmallsizepackage:1.7×1.25×0.9㎜Typ. ?VHFtunerbandswitchapplications. ?VeryLowseriesresistance:rS=Typ0.5?@IF=2mA ?Lowtotalcapacitance:CT=1.2pF(Max.)

KODENSHIKODENSHI_AUK CORP.

可天士可天士光電子集團(tuán)

SDP411Q

BandswitchingDiode

Features ?Extremelysmallsizepackage:1.2×0.8×0.7㎜Typ. ?VHFtunerbandswitchapplications. ?VeryLowseriesresistance:rS=Typ0.5Ω@IF=2mA ?Lowtotalcapacitance:CT=1.2pF(Max.)

AUK

AUK corp

SDP411Q

BandswitchingDiode

Features ?Extremelysmallsizepackage:1.2×0.8×0.7㎜Typ. ?VHFtunerbandswitchapplications. ?VeryLowseriesresistance:rS=Typ0.5Ω@IF=2mA ?Lowtotalcapacitance:CT=1.2pF(Max.)

KODENSHIKODENSHI_AUK CORP.

可天士可天士光電子集團(tuán)

SF_MJ411

BipolarNPNDevice

SEME-LAB

Seme LAB

SIA411DJ

P-Channel20-V(D-S)MOSFET

FEATURES ?Halogen-free ?TrenchFET?PowerMOSFET ?NewThermallyEnhancedPowerPAK?SC-70Package -SmallFootprintArea -LowOn-Resistance APPLICATIONS ?LoadSwitch,PASwitchandBatterySwitchforPortableDevices

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIB411DK

P-Channel20-V(D-S)MOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SMA411

CascadableAmplifier10to400MHz

MACOM

Tyco Electronics

詳細(xì)參數(shù)

  • 型號(hào)：

    RB411DS

  • 制造商：

    MCC

  • 制造商全稱：

    Micro Commercial Components

  • 功能描述：

    0.5 Amp Schottky Barrier Rectifier 20 Volts

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更多RB411DS供應(yīng)商 更新時(shí)間2025-4-26 13:58:00

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