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RC0402JR-071K60L中文資料飛思卡爾數(shù)據(jù)手冊(cè)PDF規(guī)格書

RC0402JR-071K60L
廠商型號(hào)

RC0402JR-071K60L

功能描述

Heterojunction Bipolar Transistor Technology (InGaP HBT)

文件大小

899.04 Kbytes

頁(yè)面數(shù)量

12 頁(yè)

生產(chǎn)廠商 Freescale Semiconductor, Inc
企業(yè)簡(jiǎn)稱

freescale飛思卡爾

中文名稱

飛思卡爾半導(dǎo)體官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-1-19 19:10:00

RC0402JR-071K60L規(guī)格書詳情

Heterojunction Bipolar Transistor Technology (InGaP HBT)

High Efficiency/Linearity Amplifier

The MMA25312B is a high efficiency InGaP HBT amplifier designed for use in 2400 MHz ISM applications, WLAN (802.11g), WiMAX (802.16e) and wireless broadband mesh networks. It is suitable for applications with frequencies from 2300 to 2700 MHz using simple external matching components with a 3 to 5 volt supply.

Features

? Frequency: 2300-2700 MHz

? P1dB: 31 dBm @ 2500 MHz

? Power Gain: 26 dB @ 2500 MHz

? OIP3: 40 dBm @ 2500 MHz

? Active Bias Control (On-chip)

? Single 3 to 5 Volt Supply

? Single-ended Power Detector

? Cost-effective QFN Surface Mount Package

? In Tape and Reel. T1 Suffix = 1,000 Units, 12 mm Tape Width, 7 inch Reel.

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24+
NA
990000
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1983
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0735/1029
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DIODES INCORPORATED
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SMD
100
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3580
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YAGEO
2411
con
8679
現(xiàn)貨常備產(chǎn)品原裝可到京北通宇商城查價(jià)格https://www.jbchip.com/index
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AIBU
2021+
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100500
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1822
10000
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21+
SMD
20000
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2021++
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