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RD2

85 to 132 VAC or 170 to 265 VAC Input, 8W(10W Peak) Output

Description TheRD2referencedesignboardisanexampleofaverylowcostproductionworthypowersupplydesignusingtheTOPSwitchfamilyofThree-terminalOff-lineSwitchersfromPowerIntegrations.ItisintendedtohelpTOPSwitchuserstoquicklydeveloptheirproductsbyprovidingabasic

POWERINTPower Integrations, Inc.

荷蘭帕沃英蒂格盛有限公司

RD2

10 x 10 mm Rotary DIP Switches with 1:4 Pinout

RotarySwitches 10x10mmRotaryDIPSwitcheswith1:4Pinout FEATURES ?Molded-interminalsandfullysealedconstruction ?Goldplatedcontacttoensurelowcontactresistance

GREATECS

Createcs

RD2.0E

500 mW DHD ZENER DIODE DO-35

DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

RD2.0E

500 mW PLANAR TYPE SILICON ZENER DIODES

TheRD2.0EtoRD120Earezenerdiodeswithanallowabledissipationof500mWandaplanartypeglasssealedDHD(doubleheatsinkdiode)structure. FEATURES ?Thezenervoltageserieshasawidevoltagerangeof2Vto120Vandisidealforstandardization. ?TheE24seriesisemployedforthe

NJSEMINew Jersey Semi-Conductor Products, Inc.

新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司

RD2.0EAB

400 mW DHD ZENER DIODE DO-34

[NEC] SEMICONDUCTORSELECTIONGUIDE

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

RD2.0EAB1

400 mW DHD ZENER DIODE DO-34

[NEC] SEMICONDUCTORSELECTIONGUIDE

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

RD2.0EAB2

400 mW DHD ZENER DIODE DO-34

[NEC] SEMICONDUCTORSELECTIONGUIDE

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

RD2.0EAB3

400 mW DHD ZENER DIODE DO-34

[NEC] SEMICONDUCTORSELECTIONGUIDE

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

RD2.0EAB4

400 mW DHD ZENER DIODE DO-34

[NEC] SEMICONDUCTORSELECTIONGUIDE

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

RD2.0EB

500 mW DHD ZENER DIODE DO-35

DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

RD2.0EB1

500 mW DHD ZENER DIODE DO-35

DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

RD2.0EB2

500 mW DHD ZENER DIODE DO-35

DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

RD2.0EB3

500 mW DHD ZENER DIODE DO-35

DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

RD2.0EB4

500 mW DHD ZENER DIODE DO-35

DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

RD2.0EB5

500 mW DHD ZENER DIODE DO-35

DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

RD2.0EB6

500 mW DHD ZENER DIODE DO-35

DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

RD2.0EB7

500 mW DHD ZENER DIODE DO-35

DESCRIPTION NECTypeRD2.0EtoRD200ESeriesareplanartypezenerdiodeinthepopularDO-35packagewithDHD(DoubleHeatsinkDiode)constructionhavingallowablepowerdissipationof500mW.Tomeetvariousapplicationatcustomers,Vz(zenervoltage)isclassifiedintothetighttoleranceund

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

RD2.0ES

400 mW DHD ZENER DIODE DO-34

[NEC] SEMICONDUCTORSELECTIONGUIDE

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

RD2.0F

ZENER DIODES 1 W DO-41 GLASS SEALED PACKAGE

SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

RD2.0FM

ZENER DIODES

SEMICONDUCTORSELECTIONGUIDE Microcomputer ICMemory Semi-CustomIC ParticularPurposeIC GeneralPurposeLinearIC Transistor/Diode/Thyristor MicrowaveDevice/ConsumerUseHighFrequencyDevice OpticalDevice Packages Index(QuickReferencebyTypeN

NECRenesas Electronics America

瑞薩日本瑞薩電子株式會(huì)社

詳細(xì)參數(shù)

  • 型號(hào):

    RD2

  • 制造商:

    POWERINT

  • 制造商全稱:

    Power Integrations, Inc.

  • 功能描述:

    85 to 132 VAC or 170 to 265 VAC Input, 8W(10W Peak) Output

供應(yīng)商型號(hào)品牌批號(hào)封裝庫存備注價(jià)格
NEC
1950+
SOD-123
4856
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NEC
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SOD323
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NEC
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SOT-23
25000
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INTEL/英特爾
23+
BGA
89630
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INTEL/英特爾
21+
BGA
2366
百域芯優(yōu)勢 實(shí)單必成 可開13點(diǎn)增值稅
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SAMWHA
22+
NA
30000
100%全新原裝 假一賠十
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Micron Technology Inc
23+/24+
66-LFBGA
8600
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NEC
23+
SOD123
999999
原裝正品現(xiàn)貨量大可訂貨
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RENESAS
22+
SMA
10000
原裝正品,渠道現(xiàn)貨
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INTEL
BGA
3696
全新原裝100真實(shí)現(xiàn)貨供應(yīng)
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更多RD2供應(yīng)商 更新時(shí)間2025-1-10 18:32:00