RD28F1604C3BD70集成電路（IC）的存儲器規(guī)格書PDF中文資料

Introduction

This document contains the specifications for the Intel? Advanced+ Boot Block Flash Memory (C3) Stacked Chip Scale Package (SCSP) device. C3 SCSP memory solutions are offered in the following combinations:

? 32-Mbit flash + 8-Mbit SRAM

? 32-Mbit flash + 4-Mbit SRAM

? 16-Mbit flash + 4-Mbit SRAM

? 16-Mbit flash memory + 2-Mbit SRAM

Product Overview

The C3 SCSP device combines flash memory and SRAM into a single package, which provides secure low-voltage memory solutions for portable applications.

The flash memory provides the following features:

? Enhanced security.

? Instant locking/unlocking of any flash block with zero-latency

? A 128-bit protection register that enables unique device identification,

to meet the needs ofnext generation portable applications.

? Improved 12 V production programming for increased factory throughput.

Product Features

■ Flash Memory Plus SRAM

—Reduces Memory Board Space

Required, Simplifying PCB Design

Complexity

■ SCSP Technology

—Smallest Memory Subsystem Footprint

—Area : 8 x 10 mm for 16 Mbit (0.13 μm)

Flash + 2 Mbit or 4 Mbit SRAM

—Area : 8 x 12 mm for 32 Mbit (0.13 μm)

Flash + 4 Mbit or 8 Mbit SRAM

—Height : 1.20 mm for 16 Mbit (0.13 μm)

Flash + 2 Mbit or 4 Mbit SRAM, and 32

Mbit (0.13um) Flash + 8 Mbit SRAM

—Height : 1.40 mm for 32 Mbit (0.13 μm)

Flash + 4 Mbit SRAM

—This Family also includes 0.25 μm, 0.18

μm, and 0.13 μm technologies

■ Advanced SRAM Technology

—70 ns Access Time

—Low Power Operation

—Low Voltage Data Retention Mode

■ Intel? Flash Data Integrator (FDI) Software

—Real-Time Data Storage and Code

Execution in the Same Memory Device

—Full Flash File Manager Capability

■ Advanced+ Boot Block Flash Memory

—70 ns Access Time

—Instant, Individual Block Locking

—128 bit Protection Register

—12 V Production Programming

—Fast Program and Erase Suspend

—Extended Temperature –25 °C to +85 °C

■ Blocking Architecture

—Block Sizes for Code + Data Storage

—4-Kword Parameter Blocks

—64-Kbyte Main Blocks

—100,000 Erase Cycles per Block

■ Low Power Operation

—Asynchronous Read Current: 9 mA (Flash)

—Standby Current: 7 μA (Flash)

—Automatic Power Saving Mode

■ Flash Technologies

—0.25 μm ETOX? VI, 0.18 μm ETOX?

VII and 0.13 μm ETOX? VIII Flash

Technologies