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REJ03C0397-0001中文資料瑞薩數(shù)據(jù)手冊PDF規(guī)格書

REJ03C0397-0001
廠商型號

REJ03C0397-0001

功能描述

8Mb Advanced LPSRAM (512k word x 16bit / 1M word x 8bit)

文件大小

264.26 Kbytes

頁面數(shù)量

19

生產(chǎn)廠商 Renesas Technology Corp
企業(yè)簡稱

RENESAS瑞薩

中文名稱

瑞薩科技有限公司官網(wǎng)

原廠標(biāo)識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-2-25 17:29:00

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REJ03C0397-0001規(guī)格書詳情

Description

The R1LV0816ASD is a family of low voltage 8-Mbit static RAMs organized as 524,288-words by 16-bit,

fabricated by Renesas's high-performance 0.15um CMOS and TFT technologies. The R1LV0816ASD is

suitable for memory applications where a simple interfacing, battery operating and battery backup are the

important design objectives.

The R1LV0816ASD is packaged in a 52pin thin small outline mount device [μTSOP/ 10.79mm x 10.49 mm

with the pin-pitch of 0.40mm]. It gives the best solution for a compaction of mounting area as well as

flexibility of wiring pattern of printed circuit boards.

Features

Single 2.4-3.6V power supply

Small stand-by current: 1.2たA (Vcc=3.0V, typ.)

No clocks, No refresh

All inputs and outputs are TTL compatible

Easy memory expansion byCS2, CS1#, LB# and UB#

Common Data I/O

Three-state outputs: OR-tie capability

OE# prevents data contention in the I/O bus

Operation temperature: -40 ~ +85°C

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