首頁(yè)>RF1S22N10SM>規(guī)格書(shū)詳情
RF1S22N10SM中文資料仙童半導(dǎo)體數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)
廠商型號(hào) |
RF1S22N10SM |
功能描述 | 22A, 100V, 0.080 Ohm, N-Channel Power MOSFETs |
文件大小 |
367.82 Kbytes |
頁(yè)面數(shù)量 |
6 頁(yè) |
生產(chǎn)廠商 | Fairchild Semiconductor |
企業(yè)簡(jiǎn)稱(chēng) |
Fairchild【仙童半導(dǎo)體】 |
中文名稱(chēng) | 飛兆/仙童半導(dǎo)體公司官網(wǎng) |
原廠標(biāo)識(shí) | |
數(shù)據(jù)手冊(cè) | |
更新時(shí)間 | 2025-1-7 22:23:00 |
RF1S22N10SM規(guī)格書(shū)詳情
These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits.
Features
? 22A, 100V
? rDS(ON) = 0.080?
? UIS SOA Rating Curve (Single Pulse)
? SOA is Power Dissipation Limited
? Nanosecond Switching Speeds
? Linear Transfer Characteristics
? High Input Impedance
? 175oC Operating Temperature
? Related Literature
- TB334 “Guidelines for Soldering Surface Mount
Components to PC Boards”
產(chǎn)品屬性
- 型號(hào):
RF1S22N10SM
- 制造商:
Rochester Electronics LLC
- 功能描述:
- Bulk
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
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VBsemi |
21+ |
TO263 |
10065 |
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6000 |
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23+ |
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28610 |
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23+ |
RF1S23N06LE |
13528 |
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2048+ |
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24+ |
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18000 |
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VBsemi/臺(tái)灣微碧 |
TO-252 |
699839 |
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VBsemi |
24+ |
TO263 |
5000 |
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INFINEON/英飛凌 |
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56000 |
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