首頁(yè)>RF1S4N100SM>規(guī)格書(shū)詳情
RF1S4N100SM中文資料Intersil數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)
廠商型號(hào) |
RF1S4N100SM |
功能描述 | 4.3A, 1000V, 3.500 Ohm, High Voltage, N-Channel Power MOSFETs |
文件大小 |
45.99 Kbytes |
頁(yè)面數(shù)量 |
6 頁(yè) |
生產(chǎn)廠商 | Intersil Corporation |
企業(yè)簡(jiǎn)稱(chēng) |
Intersil |
中文名稱(chēng) | Intersil Corporation官網(wǎng) |
原廠標(biāo)識(shí) | |
數(shù)據(jù)手冊(cè) | |
更新時(shí)間 | 2025-2-9 10:42:00 |
RF1S4N100SM規(guī)格書(shū)詳情
The RFP4N100 and RFP4N100SM are N-Channel enhancement mode silicon gate power field effect transistors. They are designed for use in applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. This type can be operated directly from an integrated circuit.
Features
? 4.3A, 1000V
? rDS(ON) = 3.500?
? UIS Rating Curve (Single Pulse)
? -55°C to 150°C Operating Temperature
? Related Literature
- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”
產(chǎn)品屬性
- 型號(hào):
RF1S4N100SM
- 功能描述:
MOSFET TO-263
- RoHS:
否
- 制造商:
STMicroelectronics
- 晶體管極性:
N-Channel
- 汲極/源極擊穿電壓:
650 V
- 閘/源擊穿電壓:
25 V
- 漏極連續(xù)電流:
130 A 電阻汲極/源極
- RDS(導(dǎo)通):
0.014 Ohms
- 配置:
Single
- 安裝風(fēng)格:
Through Hole
- 封裝/箱體:
Max247
- 封裝:
Tube
供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
---|---|---|---|---|---|---|---|
HARRISCORPORATION |
23+ |
NA |
25630 |
原裝正品 |
詢價(jià) | ||
FAIRCHILD |
23+ |
TO-263 |
9526 |
詢價(jià) | |||
24+ |
N/A |
3110 |
詢價(jià) | ||||
I |
23+ |
TO- |
10000 |
公司只做原裝正品 |
詢價(jià) | ||
24+ |
N/A |
56000 |
一級(jí)代理-主營(yíng)優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇 |
詢價(jià) | |||
FAIRCHILD/仙童 |
0022+ |
TO-263-2 |
2000 |
就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件! |
詢價(jià) | ||
FAIRCHILD/仙童 |
23+ |
TO-263-2 |
50000 |
全新原裝正品現(xiàn)貨,支持訂貨 |
詢價(jià) | ||
FCS |
2022+ |
TO-263 |
30000 |
進(jìn)口原裝現(xiàn)貨供應(yīng),原裝 假一罰十 |
詢價(jià) | ||
HARRIS |
NA |
8600 |
原裝正品,歡迎來(lái)電咨詢! |
詢價(jià) | |||
INTERSIL |
23+ |
65480 |
詢價(jià) |