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RF1S4N100SM中文資料Intersil數(shù)據(jù)手冊(cè)PDF規(guī)格書(shū)

RF1S4N100SM
廠商型號(hào)

RF1S4N100SM

功能描述

4.3A, 1000V, 3.500 Ohm, High Voltage, N-Channel Power MOSFETs

文件大小

45.99 Kbytes

頁(yè)面數(shù)量

6 頁(yè)

生產(chǎn)廠商 Intersil Corporation
企業(yè)簡(jiǎn)稱(chēng)

Intersil

中文名稱(chēng)

Intersil Corporation官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-2-9 10:42:00

RF1S4N100SM規(guī)格書(shū)詳情

The RFP4N100 and RFP4N100SM are N-Channel enhancement mode silicon gate power field effect transistors. They are designed for use in applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. This type can be operated directly from an integrated circuit.

Features

? 4.3A, 1000V

? rDS(ON) = 3.500?

? UIS Rating Curve (Single Pulse)

? -55°C to 150°C Operating Temperature

? Related Literature

- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”

產(chǎn)品屬性

  • 型號(hào):

    RF1S4N100SM

  • 功能描述:

    MOSFET TO-263

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

供應(yīng)商 型號(hào) 品牌 批號(hào) 封裝 庫(kù)存 備注 價(jià)格
HARRISCORPORATION
23+
NA
25630
原裝正品
詢價(jià)
FAIRCHILD
23+
TO-263
9526
詢價(jià)
24+
N/A
3110
詢價(jià)
I
23+
TO-
10000
公司只做原裝正品
詢價(jià)
24+
N/A
56000
一級(jí)代理-主營(yíng)優(yōu)勢(shì)-實(shí)惠價(jià)格-不悔選擇
詢價(jià)
FAIRCHILD/仙童
0022+
TO-263-2
2000
就找我吧!--邀您體驗(yàn)愉快問(wèn)購(gòu)元件!
詢價(jià)
FAIRCHILD/仙童
23+
TO-263-2
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價(jià)
FCS
2022+
TO-263
30000
進(jìn)口原裝現(xiàn)貨供應(yīng),原裝 假一罰十
詢價(jià)
HARRIS
NA
8600
原裝正品,歡迎來(lái)電咨詢!
詢價(jià)
INTERSIL
23+
65480
詢價(jià)