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RF2L42008CG2中文資料意法半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書

RF2L42008CG2
廠商型號

RF2L42008CG2

功能描述

8 W, 28 V, 0.7 to 4.2 GHz RF power LDMOS transistor

文件大小

1.57035 Mbytes

頁面數(shù)量

12

生產(chǎn)廠商 STMicroelectronics
企業(yè)簡稱

STMICROELECTRONICS意法半導(dǎo)體

中文名稱

意法半導(dǎo)體集團官網(wǎng)

原廠標識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2025-1-26 15:22:00

RF2L42008CG2規(guī)格書詳情

Features

? High efficiency and linear gain operations

? Integrated ESD protection

? Internally matched for ease of use

? Large positive and negative gate-source voltage range for improved class C

operation

? Excellent thermal stability, low HCI drift

? In compliance with the European directive 2002/95/EC

Description

The RF2L42008CG2 is a 8 W, 28 V, internally matched LDMOS FET, designed for

global positioning system, wideband communications and ISM applications in the

frequency range from 0.7 to 4.2 GHz. It can be used in class AB, B or C for all typical

modulation formats.

Applications

? Telecom and wideband communications

? Avionics and radar

? 2.45 GHz industrial

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