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RFD14N05中文資料仙童半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書

RFD14N05
廠商型號

RFD14N05

功能描述

14A, 50V, 0.100 Ohm, N-Channel Power MOSFETs

文件大小

157.91 Kbytes

頁面數(shù)量

8

生產(chǎn)廠商 Fairchild Semiconductor
企業(yè)簡稱

Fairchild仙童半導(dǎo)體

中文名稱

飛兆/仙童半導(dǎo)體公司官網(wǎng)

原廠標(biāo)識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2025-1-23 23:00:00

RFD14N05規(guī)格書詳情

These are N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated directly from integrated circuits

Features

? 14A, 50V

? rDS(ON) = 0.100?

? Temperature Compensating PSPICE? Model

? Peak Current vs Pulse Width Curve

? UIS Rating Curve

? 175°C Operating Temperature

? Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”

產(chǎn)品屬性

  • 型號:

    RFD14N05

  • 功能描述:

    MOSFET TO-251AA N-Ch Power

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

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23+
NA/
880
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FAIRCHILD
21+
TO-252
1498
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詢價
HARRIS
2016+
TO251
3000
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INTERSI
2020+
TO-251
80000
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FAIRCHILD
23+
TO-252
4500
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24+
TO251
58000
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FAIRCHILD
23+
NA
19960
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HARRS
2048+
TO-252
9851
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INTERSIL
TO-251
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FAIRCHILD
23+
TO-251
9526
詢價