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RFD4N06L

4A, 60V, 0.600 Ohm, Logic Level, N-Channel Power MOSFETs

TheRFD4N06L,RFD4N06LSMareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsspecificallydesignedforusewithlogiclevel(5volt)drivingsourcesinapplicationssuchasprogrammablecontrollers,automotiveswitching,andsolenoiddrivers.Thisperformanceisaccomplished

Intersil

Intersil Corporation

RFD4N06L

4A, 60V, 0.600 Ohm, Logic Level, N-Channel Power MOSFETs

TheRFD4N06L,RFD4N06LSMareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsspecificallydesignedforusewithlogiclevel(5volt)drivingsourcesinapplicationssuchasprogrammablecontrollers,automotiveswitching,andsolenoiddrivers.Thisperformanceisaccomplished

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

RFD4N06LSM

4A, 60V, 0.600 Ohm, Logic Level, N-Channel Power MOSFETs

TheRFD4N06L,RFD4N06LSMareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsspecificallydesignedforusewithlogiclevel(5volt)drivingsourcesinapplicationssuchasprogrammablecontrollers,automotiveswitching,andsolenoiddrivers.Thisperformanceisaccomplished

Intersil

Intersil Corporation

RFD4N06LSM

4A, 60V, 0.600 Ohm, Logic Level, N-Channel Power MOSFETs

TheRFD4N06L,RFD4N06LSMareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsspecificallydesignedforusewithlogiclevel(5volt)drivingsourcesinapplicationssuchasprogrammablecontrollers,automotiveswitching,andsolenoiddrivers.Thisperformanceisaccomplished

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

RFD4N06LSM9A

N-channel Enhancement Mode Power MOSFET

Features ?VDS=60V,ID=50A RDS(ON)

BychipBYCHIP ELECTRONICS CO., LIMITED

百域芯深圳市百域芯科技有限公司

MTM4N06L

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=4A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.6Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

MTP4N06L

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent-ID=4A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.6Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導體股份有限公司

PJW4N06A

60VN-ChannelEnhancementModeMOSFET

Features ?RDS(ON),VGS@10V,ID@3.0A

PANJITPan Jit International Inc.

強茂強茂股份有限公司

PJW4N06A

60VN-ChannelEnhancementModeMOSFET

PANJITPan Jit International Inc.

強茂強茂股份有限公司

PJW4N06A-AU

60VN-ChannelEnhancementModeMOSFET

Features ?RDS(ON),VGS@10V,ID@3A

PANJITPan Jit International Inc.

強茂強茂股份有限公司

詳細參數(shù)

  • 型號：

    RFD4N06L

  • 制造商：

    Rochester Electronics LLC

  • 功能描述：

    - Bulk

供應商型號品牌批號封裝庫存備注價格
24+
N/A
5000
公司存貨
 詢價
INTERSIL/FSC
23+
TO-251
28610
詢價
infineon
23+
原廠原裝
3000
全新原裝
 詢價
FAIRCHILD
23+
NA
19960
只做進口原裝,終端工廠免費送樣
 詢價
HARRIS
23+
NA
1410
專做原裝正品,假一罰百!
 詢價
FAIRCHILD/仙童
23+
TO-252
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價
FAIRCHILD/仙童
24+
TO-252
600
原裝現(xiàn)貨假一賠十
 詢價
FAIRCHILD/仙童
2022+
SOT-252
12888
原廠代理 終端免費提供樣品
 詢價
F
23+
SOT-252
6000
原裝正品，支持實單
 詢價
FAIRCHILD/仙童
24+
NA/
3650
原廠直銷,現(xiàn)貨供應,賬期支持!
 詢價
更多RFD4N06L供應商 更新時間2025-4-26 16:00:00

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