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RFD7N10LESM中文資料Intersil數(shù)據(jù)手冊PDF規(guī)格書

RFD7N10LESM
廠商型號(hào)

RFD7N10LESM

功能描述

7A, 100V, 0.300 Ohm, N-Channel, Logic Level, Power MOSFETs

文件大小

361.53 Kbytes

頁面數(shù)量

7

生產(chǎn)廠商 Intersil Corporation
企業(yè)簡稱

Intersil

中文名稱

Intersil Corporation官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-2-8 12:18:00

RFD7N10LESM規(guī)格書詳情

These N-Channel power MOSFETs are manufactured using a modern process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, relay drivers and emitter switches for bipolar transistors. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate bias in the 3V to 5V range, thereby facilitating true on-off power control directly from logic level (5V) integrated circuits.

Formerly developmental type TA49046.

Features

? 7A, 100V

? rDS(ON) = 0.300?

? Temperature Compensating PSPICE? Model

? Can be Driven Directly from CMOS, NMOS, TTL Circuits

? Peak Current vs Pulse Width Curve

? UIS Rating Curve

? 175°C Operating Temperature

? Related Literature

- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”

產(chǎn)品屬性

  • 型號(hào):

    RFD7N10LESM

  • 制造商:

    INTERSIL

  • 制造商全稱:

    Intersil Corporation

  • 功能描述:

    7A, 100V, 0.300 Ohm, N-Channel, Logic Level, Power MOSFETs

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INTERSIL
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Harris
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