RFG50N05L中文資料Intersil數(shù)據(jù)手冊PDF規(guī)格書

These are logic-level N-channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use with logic-level (5V) driving sources in applications such as programmable controllers, automotive switching, switching regulators, switching converters, motor relay drivers and emitter switches for bipolar transistors. This performance is accomplished through a special gate oxide design which provides full rated conductance at gate bias in the 3V - 5V range, thereby facilitating true on-off power control directly from integrated circuit supply voltages.

Features

? 50A, 50V

? rDS(ON) = 0.022?

? UIS SOA Rating Curve (Single Pulse)

? Design Optimized for 5V Gate Drive

? Can be Driven Directly from CMOS, NMOS, TTL Circuits

? Compatible with Automotive Drive Requirements

? SOA is Power Dissipation Limited

? Nanosecond Switching Speeds

? Linear Transfer Characteristics

? High Input Impedance

? Majority Carrier Device

? Related Literature

- TB334 “Guidelines for Soldering Surface Mount

Components to PC Boards”