| 零件編號(hào) | 下載&訂購(gòu) | 功能描述 | 制造商&上傳企業(yè) | LOGO |
|---|---|---|---|---|
RFH | Standard 4-Pin DIP Package Enable Function Features Standard4-PinDIPPackage EnableFunction TypicalApplications Telecommunication UniversalClock | Vectron Vectron International, Inc | Vectron | |
10A, 450V and 500V, 0.600 Ohm, N-Channel Power MOSFETs TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydrivers,anddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedrivepower.These | Intersil Intersil Corporation | Intersil | ||
10A, 450V and 500V, 0.600 Ohm, N-Channel Power MOSFETs TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydrivers,anddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedrivepower.These | Intersil Intersil Corporation | Intersil | ||
12A, 350V and 400V, 0.380 Ohm, N-Channel Power MOSFETs TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydriversanddriversforhigh-powerbipolarswitchingtransistorsrequiringhighspeedandlowgatedrivepower.These | Intersil Intersil Corporation | Intersil | ||
12A, 350V and 400V, 0.380 Ohm, N-Channel Power MOSFETs TheseareN-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydriversanddriversforhigh-powerbipolarswitchingtransistorsrequiringhighspeedandlowgatedrivepower.These | Intersil Intersil Corporation | Intersil | ||
-25A, -100V and -80V, 0.150 Ohm, P-Channel Power MOSFETs Description TheseareP-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydriversanddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedrive | Intersil Intersil Corporation | Intersil | ||
-25A, -100V and -80V, 0.150 Ohm, P-Channel Power MOSFETs Description TheseareP-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydriversanddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedrive | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | ||
-25A, -100V and -80V, 0.150 Ohm, P-Channel Power MOSFETs Description TheseareP-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydriversanddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedrive | Intersil Intersil Corporation | Intersil | ||
-25A, -100V and -80V, 0.150 Ohm, P-Channel Power MOSFETs Description TheseareP-Channelenhancementmodesilicongatepowerfieldeffecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydriversanddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedrive | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | ||
POWER MOS FIELD EFFECT TRANSISTORS [GESS] N-ChannelEnhancement-ModePowerField-EffectTransistors TheRFH45N05andRFH45N06aren-channelenhancement-modesilicon-gatepowerfield-effecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydrivers,anddriversforhigh-p | ETCList of Unclassifed Manufacturers 未分類制造商 | ETC | ||
Power MOS Field-Effect Transistors N-ChannelEnhancement-ModePowerField-EffectTransistors TheRFH45N05andRFH45N06aren-channelenhancement-modesilicon-gatepowerfield-effecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydrivers,anddriversforhigh-powerbip | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | ||
POWER MOS FIELD EFFECT TRANSISTORS [GESS] N-ChannelEnhancement-ModePowerField-EffectTransistors TheRFH45N05andRFH45N06aren-channelenhancement-modesilicon-gatepowerfield-effecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydrivers,anddriversforhigh-p | ETCList of Unclassifed Manufacturers 未分類制造商 | ETC | ||
Power MOS Field-Effect Transistors N-ChannelEnhancement-ModePowerField-EffectTransistors TheRFH45N05andRFH45N06aren-channelenhancement-modesilicon-gatepowerfield-effecttransistorsdesignedforapplicationssuchasswitchingregulators,switchingconverters,motordrivers,relaydrivers,anddriversforhigh-powerbip | NJSEMINew Jersey Semi-Conductor Products, Inc. 新澤西半導(dǎo)體新澤西半導(dǎo)體產(chǎn)品股份有限公司 | NJSEMI | ||
50MHz TO 1000MHz, 15W GaN WIDEBAND ProductDescription TheRFHA1000isawidebandPowerAmplifierdesignedforCWandpulsedapplicationssuchaswirelessinfrastructure,RADAR,twowayradiosandgeneralpurposeamplification.UsinganadvancedhighpowerdensityGalliumNitride(GaN)semiconductorprocess,thesehigh-performance | RFMD RF Micro Devices | RFMD | ||
50MHz TO 1000MHz, 15W GaN WIDEBAND ProductDescription TheRFHA1000isawidebandPowerAmplifierdesignedforCWandpulsedapplicationssuchaswirelessinfrastructure,RADAR,twowayradiosandgeneralpurposeamplification.UsinganadvancedhighpowerdensityGalliumNitride(GaN)semiconductorprocess,thesehigh-performance | RFMD RF Micro Devices | RFMD | ||
50MHz TO 1000MHz, 15W GaN WIDEBAND ProductDescription TheRFHA1000isawidebandPowerAmplifierdesignedforCWandpulsedapplicationssuchaswirelessinfrastructure,RADAR,twowayradiosandgeneralpurposeamplification.UsinganadvancedhighpowerdensityGalliumNitride(GaN)semiconductorprocess,thesehigh-performance | RFMD RF Micro Devices | RFMD | ||
50MHz TO 1000MHz, 15W GaN WIDEBAND ProductDescription TheRFHA1000isawidebandPowerAmplifierdesignedforCWandpulsedapplicationssuchaswirelessinfrastructure,RADAR,twowayradiosandgeneralpurposeamplification.UsinganadvancedhighpowerdensityGalliumNitride(GaN)semiconductorprocess,thesehigh-performance | RFMD RF Micro Devices | RFMD | ||
50MHz TO 1000MHz, 15W GaN WIDEBAND ProductDescription TheRFHA1000isawidebandPowerAmplifierdesignedforCWandpulsedapplicationssuchaswirelessinfrastructure,RADAR,twowayradiosandgeneralpurposeamplification.UsinganadvancedhighpowerdensityGalliumNitride(GaN)semiconductorprocess,thesehigh-performance | RFMD RF Micro Devices | RFMD | ||
50MHz TO 1000MHz, 15W GaN WIDEBAND ProductDescription TheRFHA1000isawidebandPowerAmplifierdesignedforCWandpulsedapplicationssuchaswirelessinfrastructure,RADAR,twowayradiosandgeneralpurposeamplification.UsinganadvancedhighpowerdensityGalliumNitride(GaN)semiconductorprocess,thesehigh-performance | RFMD RF Micro Devices | RFMD | ||
50MHz TO 1000MHz, 15W GaN WIDEBAND ProductDescription TheRFHA1000isawidebandPowerAmplifierdesignedforCWandpulsedapplicationssuchaswirelessinfrastructure,RADAR,twowayradiosandgeneralpurposeamplification.UsinganadvancedhighpowerdensityGalliumNitride(GaN)semiconductorprocess,thesehigh-performance | RFMD RF Micro Devices | RFMD |
詳細(xì)參數(shù)
- 型號(hào)：
RFH
- 制造商：
Rochester Electronics LLC
- 功能描述：
- Bulk
| 供應(yīng)商 | 型號(hào) | 品牌 | 批號(hào) | 封裝 | 庫(kù)存 | 備注 | 價(jià)格 |
|---|---|---|---|---|---|---|---|
INTEL |
23+ |
原廠封裝 |
9526 |
詢價(jià) | |||
哈里斯 |
05+ |
TO-247 |
2000 |
原裝進(jìn)口 |
詢價(jià) | ||
RCA |
24+ |
500 |
詢價(jià) | ||||
HARRIS |
92+ |
TO220/ |
2450 |
全新原裝進(jìn)口自己庫(kù)存優(yōu)勢(shì) |
詢價(jià) | ||
MICROCHIP |
17+ |
sopdip |
6200 |
100%原裝正品現(xiàn)貨 |
詢價(jià) | ||
infineon |
23+ |
原廠原裝 |
3000 |
全新原裝 |
詢價(jià) | ||
RFMD |
2017+ |
SMD |
1585 |
只做原裝正品假一賠十! |
詢價(jià) | ||
HARRIS |
17+ |
TO220/ |
9988 |
只做原裝進(jìn)口,自己庫(kù)存 |
詢價(jià) | ||
ALCATEL |
24+ |
QFP-48 |
2987 |
只售原裝自家現(xiàn)貨!誠(chéng)信經(jīng)營(yíng)!歡迎來(lái)電! |
詢價(jià) | ||
TEConnectivity |
新 |
5 |
全新原裝 貨期兩周 |
詢價(jià) |
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