RFL1N08L中文資料新澤西半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書

The RFL1N18L and RFL1N20L and the RFP2N18L and RFP2N20L are n-channel enhancement-mode silicon-gate power, field-effect transistors specifically designed for use with logic level (5 volt) driving sources In applications such as programmable controllers, automotive switching, and solenoid drivers. This performance Isaccomplished through a special gate oxide design which provides full rated conduction at gate biases In the 3-5 volt range, thereby facilitating true on-off power control directly from logic circuit supply voltages.

Features:

■ Design optimized lor 5 volt gale drive

■ Can {>8 driven directly from Q-MOS, N-MOS, TTL Circuits

■ Compatible with automotive drive requirements

■ SOA ispower-dissipation limited

■ Nanosecond switching speeds

■ Linear transfer characteristics

■ High Input impedance

■ Majority carrier device