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RFMD2014SQ

DIRECT QUADRATURE MODULATOR 1450MHz TO 2700MHz

RFMD

RF Micro Devices

RFMD2014SR

DIRECTQUADRATUREMODULATOR1450MHzTO2700MHz

RFMD

RF Micro Devices

RSZ-2014

1WattSMDMiniatureIsolatedSingleOutput

RECOM

Recom International Power

RSZ-2014HP

1WattSMDMiniatureIsolatedSingleOutput

RECOM

Recom International Power

SEL2014

3phiRoundWideViewingAngleLEDs

3φRoundWideViewingAngleLEDs

SankenSanken electric

三墾三墾電氣株式會(huì)社

SER2014

ShieldedPowerInductor??SER2000

COILCRAFTCoilcraft lnc.

線藝美國(guó)線藝公司

SFT2014

HighEnergyNPNTransistor

200AMP100–140VoltHighEnergyNPNTransistor Features: ?BVCBO=250VMIN ?600WattsPowerDissipation ?ExcellentSOACurve ?Es/bof800mJ ?Gainofover5at200A ?HighReliabilityConstruction ?PlanarChipConstructionwithLowLeakageandVeryFastSwitching ?TX,TXV,S-Leve

SSDI

Solid States Devices, Inc

SFT2014

200AMP100-140VOLTSNPNTRANSISTOR

200AMP100–140VOLTSNPNTRANSISTOR Features: ?BV(CBO)=250Voltsminimum ?600WPowerDissipation ?ExcellentSOACurve ?Es/bof800mJ ?Gainofover5at200A ?HighRelConstructionincludingGoldEutecticDieMounting,AluminumWiring ?PlanarChipConstructionwithLowLeakage

SSDI

Solid States Devices, Inc

SFT2014

HIGHENERCYNPNTRANSISTOR

[SSDI] 2N5094AND2N5096 HIGHVOLTAGEPNPTRANSISTOR450-500VOLTS SFT2010,SFT2012,SFT2014 200AMPHIGHENERGYNPNTRANSISTORVCEO100,120,140VOLTS

ETCList of Unclassifed Manufacturers

未分類制造商

SG2014

HIGHVOLTAGEMEDIUMCURRENTDRIVERARRAYS

DESCRIPTION TheSG2000seriesintegratessevenNPNDarlingtonpairswithinternalsuppressiondiodestodrivelamps,relays,andsolenoidsinmanymilitary,aerospace,andindustrialapplicationsthatrequiresevereenvironments.Allunitsfeatureopencollectoroutputswithgreaterthan50Vbrea

MicrosemiMicrosemi Corporation

美高森美美高森美公司

SG2014

HIGHVOLTAGEMEDIUMCURRENTDRIVERARRAYS

DESCRIPTION TheSG2000seriesintegratessevenNPNDarlingtonpairswithinternalsuppressiondiodestodrivelamps,relays,andsolenoidsinmanymilitary,aerospace,andindustrialapplicationsthatrequiresevereenvironments.Allunitsfeatureopencollectoroutputswithgreaterthan50Vbrea

MicrosemiMicrosemi Corporation

美高森美美高森美公司

SG2014

HIGHVOLTAGEMEDIUMCURRENTDRIVERARRAYS

Description Crossreferenceto5962-86058012A,5962-86058012,86058012 TheSG2800seriesintegrateseightNPNDarlingtonpairswithinternalsuppressiondiodestodrivelamps,relays,andsolenoidsinmanymilitary,aerospace,andindustrialapplicationsthatrequiresevereenvironments.A

MicrosemiMicrosemi Corporation

美高森美美高森美公司

SG2014

HIGHVOLTAGEMEDIUMCURRENTDRIVERARRAYS

DESCRIPTION TheSG2000seriesintegratessevenNPNDarlingtonpairswithinternalsuppressiondiodestodrivelamps,relays,andsolenoidsinmanymilitary,aerospace,andindustrialapplicationsthatrequiresevereenvironments.Allunitsfeatureopencollectoroutputswithgreaterthan50Vbrea

MicrosemiMicrosemi Corporation

美高森美美高森美公司

SGM2014

LowPower,LowDropout,250mA,RF-LinearRegulators

GENERALDESCRIPTION TheSGM2014serieslow-power,low-noise,low-dropout,CMOSlinearvoltageregulatorsoperatefroma2.5Vto5.5Vinputanddeliverupto250mA.Theyaretheperfectchoiceforlowvoltage,lowpowerapplications. FEATURES -LowOutputNoise:30μVRMSTYP(10Hzto100kHz) -Ul

SGMICROSG Micro Corp

圣邦股份圣邦微電子（北京）股份有限公司

SGM2014

GaAsN-channelDualGateMESFET?

Description TheSGM2014MisanN-channeldualgateGaAsMESFETforUHFbandlow-noiseamplification.ThisFETissuitableforawiderangeofapplicationsincludingTVtuners,cellularradios,andDBSIFamplifiers. Features ?Lowvoltageoperation ?Lownoise:NF=1.5dB(typ.)at900MHz ?

SonySony Corporation

索尼

SGM2014

GaAsN-channelDualGateMESFET

Description TheSGM2014ANisanN-channeldualgateGaAsMESFETforUHFbandlow-noiseamplification.ThisFETissuitableforawiderangeofapplicationsincludingTVtuners,cellularradios,andDBSIFamplifiers. Features ?Ultrasmallpackage ?Lowvoltageoperation ?Lownoise:NF=1.

SonySony Corporation

索尼

SGM2014

GaAsN-channelDualGateMESFET

Description TheSGM2014AMisanN-channeldualgateGaAsMESFETforUHFbandlow-noiseamplification.ThisFETissuitableforawiderangeofapplicationsincludingTVtuners,cellularradios,andDBSIFamplifiers. Features ?Lowvoltageoperation ?Lownoise:NF=1.5dB(typ.)at900MHz ?

SonySony Corporation

索尼

SGM2014AM

GaAsN-channelDualGateMESFET

Description TheSGM2014AMisanN-channeldualgateGaAsMESFETforUHFbandlow-noiseamplification.ThisFETissuitableforawiderangeofapplicationsincludingTVtuners,cellularradios,andDBSIFamplifiers. Features ?Lowvoltageoperation ?Lownoise:NF=1.5dB(typ.)at900MHz ?

SonySony Corporation

索尼

SGM2014AN

GaAsN-channelDualGateMESFET

Description TheSGM2014ANisanN-channeldualgateGaAsMESFETforUHFbandlow-noiseamplification.ThisFETissuitableforawiderangeofapplicationsincludingTVtuners,cellularradios,andDBSIFamplifiers. Features ?Ultrasmallpackage ?Lowvoltageoperation ?Lownoise:NF=1.

SonySony Corporation

索尼

SGM2014M

GaAsN-channelDualGateMESFET?

Description TheSGM2014MisanN-channeldualgateGaAsMESFETforUHFbandlow-noiseamplification.ThisFETissuitableforawiderangeofapplicationsincludingTVtuners,cellularradios,andDBSIFamplifiers. Features ?Lowvoltageoperation ?Lownoise:NF=1.5dB(typ.)at900MHz ?

SonySony Corporation

索尼

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
RFMD
24+
QFN
6000
RFMD專營(yíng)品牌原裝進(jìn)口假一賠十
 詢價(jià)
RFMD
18+
QFN
85600
保證進(jìn)口原裝可開(kāi)17%增值稅發(fā)票
 詢價(jià)
Qorvo
24+
N/A
3600
原廠渠道保證進(jìn)口原裝正品假一罰十價(jià)格合理
 詢價(jià)
RFMD
22+
SMD
6852
只做原裝正品現(xiàn)貨!或訂貨假一賠十!
 詢價(jià)
RFMD
23+
假一賠十
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
RFMD
23+
QFN-32
50000
全新原裝正品現(xiàn)貨,支持訂貨
 詢價(jià)
RFMD
24+
QFN-32
930
原裝現(xiàn)貨假一賠十
 詢價(jià)
QORVO
24+
SMD
3200
進(jìn)口原裝假一賠百
 詢價(jià)
RFMD
2022
QFN-32
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
 詢價(jià)
RFMD
2021+
NA
3000
十年專營(yíng)原裝現(xiàn)貨,假一賠十
 詢價(jià)
更多RFMD2014SQ供應(yīng)商 更新時(shí)間2024-12-28 17:20:00

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