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RFP22N10中文資料Intersil數(shù)據(jù)手冊(cè)PDF規(guī)格書

RFP22N10
廠商型號(hào)

RFP22N10

功能描述

22A, 100V, 0.080 Ohm, N-Channel Power MOSFETs

文件大小

49.13 Kbytes

頁(yè)面數(shù)量

6 頁(yè)

生產(chǎn)廠商 Intersil Corporation
企業(yè)簡(jiǎn)稱

Intersil

中文名稱

Intersil Corporation官網(wǎng)

原廠標(biāo)識(shí)
數(shù)據(jù)手冊(cè)

下載地址一下載地址二到原廠下載

更新時(shí)間

2025-1-20 23:00:00

RFP22N10規(guī)格書詳情

These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers. These transistors can be operated directly from integrated circuits.

Features

? 22A, 100V

? rDS(ON) = 0.080?

? UIS SOA Rating Curve (Single Pulse)

? SOA is Power Dissipation Limited

? Nanosecond Switching Speeds

? Linear Transfer Characteristics

? High Input Impedance

? 175°C Operating Temperature

? Related Literature

- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”

產(chǎn)品屬性

  • 型號(hào):

    RFP22N10

  • 功能描述:

    MOSFET N-Ch Power MOSFET 100V/22a/0.080 Ohm

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導(dǎo)通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風(fēng)格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

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NA/
800
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5254
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22+
TO2203
9000
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FAIRCHILD
23+
NA
19960
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95+
DIP
800
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HARRIS
DIP
699839
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2011
PBFREE
880000
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INTESIL
23+
TO-220
3000
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PBFREE
8560
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16800
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