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RFP4N100中文資料Intersil數(shù)據(jù)手冊PDF規(guī)格書

RFP4N100
廠商型號

RFP4N100

功能描述

4.3A, 1000V, 3.500 Ohm, High Voltage, N-Channel Power MOSFETs

文件大小

45.99 Kbytes

頁面數(shù)量

6

生產(chǎn)廠商 Intersil Corporation
企業(yè)簡稱

Intersil

中文名稱

Intersil Corporation官網(wǎng)

原廠標識
數(shù)據(jù)手冊

下載地址一下載地址二到原廠下載

更新時間

2025-2-2 20:00:00

RFP4N100規(guī)格書詳情

The RFP4N100 and RFP4N100SM are N-Channel enhancement mode silicon gate power field effect transistors. They are designed for use in applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. This type can be operated directly from an integrated circuit.

Features

? 4.3A, 1000V

? rDS(ON) = 3.500?

? UIS Rating Curve (Single Pulse)

? -55°C to 150°C Operating Temperature

? Related Literature

- TB334 “Guidelines for Soldering Surface Mount Components to PC Boards”

產(chǎn)品屬性

  • 型號:

    RFP4N100

  • 功能描述:

    MOSFET TO-220AB N-Ch Power

  • RoHS:

  • 制造商:

    STMicroelectronics

  • 晶體管極性:

    N-Channel

  • 汲極/源極擊穿電壓:

    650 V

  • 閘/源擊穿電壓:

    25 V

  • 漏極連續(xù)電流:

    130 A 電阻汲極/源極

  • RDS(導通):

    0.014 Ohms

  • 配置:

    Single

  • 安裝風格:

    Through Hole

  • 封裝/箱體:

    Max247

  • 封裝:

    Tube

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