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RFP8P06LE

8A, 60V, 0.300 Ohm, ESD Rated, Logic Level, P-Channel Power MOSFET

TheseproductsareP-ChannelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingregu

Intersil

Intersil Corporation

NDT8P06

P-ChannelMOSFET

KEXINGuangdong Kexin Industrial Co.,Ltd

科信電子廣東科信實業(yè)有限公司

RFD8P06

8A,60V,0.300Ohm,P-ChannelPowerMOSFETs

TheseareP-ChannelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingreg

Intersil

Intersil Corporation

RFD8P06E

8A,60V,0.300Ohm,P-ChannelPowerMOSFETs

TheseareP-ChannelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingreg

Intersil

Intersil Corporation

RFD8P06E

8A,60V,0.300Ohm,P-ChannelPowerMOSFETs

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

RFD8P06ESM

8A,60V,0.300Ohm,P-ChannelPowerMOSFETs

FairchildFairchild Semiconductor

仙童半導體飛兆/仙童半導體公司

RFD8P06ESM

8A,60V,0.300Ohm,P-ChannelPowerMOSFETs

TheseareP-ChannelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIintegratedcircuitsgivesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingreg

Intersil

Intersil Corporation

RFD8P06LE

8A,60V,0.300Ohm,ESDRated,LogicLevel,P-ChannelPowerMOSFET

TheseproductsareP-ChannelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingregu

Intersil

Intersil Corporation

RFD8P06LESM

8A,60V,0.300Ohm,ESDRated,LogicLevel,P-ChannelPowerMOSFET

TheseproductsareP-ChannelpowerMOSFETsmanufacturedusingtheMegaFETprocess.Thisprocess,whichusesfeaturesizesapproachingthoseofLSIcircuits,givesoptimumutilizationofsilicon,resultinginoutstandingperformance.Theyweredesignedforuseinapplicationssuchasswitchingregu

Intersil

Intersil Corporation

RFD8P06TM

P-Channel60-V(D-S)MOSFET

VBSEMIVBsemi Electronics Co.,Ltd

微碧半導體微碧半導體(臺灣)有限公司

詳細參數(shù)

  • 型號:

    RFP8P06LE

  • 制造商:

    Rochester Electronics LLC

  • 功能描述:

    - Bulk

  • 制造商:

    Harris Corporation

供應商型號品牌批號封裝庫存備注價格
24+
5000
公司存貨
詢價
HARRIS
17+
TO-220
6200
詢價
HAR
23+
RFP8P06LE
13528
振宏微原裝正品,假一罰百
詢價
INTERSIL
23+
65480
詢價
INTERSIL
2023+
80000
一級代理/分銷渠道價格優(yōu)勢 十年芯程一路只做原裝正品
詢價
NCE/新潔能
23+
TO-220
69820
終端可以免費供樣,支持BOM配單!
詢價
HAR
2021+
TO-220
100500
一級代理專營品牌!原裝正品,優(yōu)勢現(xiàn)貨,長期排單到貨
詢價
F
23+
TO-220AB
10000
公司只做原裝正品
詢價
FAIRCHILD/仙童
2022+
TO-220
12888
原廠代理 終端免費提供樣品
詢價
FAIRCHILD/仙童
23+
TO-220
11200
原廠授權一級代理、全球訂貨優(yōu)勢渠道、可提供一站式BO
詢價
更多RFP8P06LE供應商 更新時間2025-1-22 10:20:00