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首頁 >RFP8P10>規(guī)格書列表

零件編號	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
RFP8P10	文件：40.9 Kbytes Page：5 Pages	8A, 100V, 0.400 Ohm, P-Channel Power MOSFET ThisP-Channelenhancementmodesilicongatepowerfieldeffecttransistorisdesignedforapplicationssuchasswitchingregulators,switchingconvertors,motordrivers,relaydrivers,anddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedrivepower.Thesety	Intersil Intersil Corporation	Intersil
RFP8P10	文件：279.17 Kbytes Page：5 Pages	-8A, -80V AND -100V, 0.400 Ohm, P-CHANNEL POWER MOSFETS ThisP-Channelenhancementmodesilicongatepowerfieldeffecttransistorisdesignedforapplicationssuchasswitchingregulators,switchingconvertors,motordrivers,relaydrivers,anddriversforhighpowerbipolarswitchingtransistorsrequiringhighspeedandlowgatedrivepower.Thesety	HARRIS Harris Corporation	HARRIS
RFP8P10	文件：966.94 Kbytes Page：7 Pages	P-Channel 100 V (D-S) MOSFET	VBSEMIVBsemi Electronics Co.,Ltd 微碧半導(dǎo)體微碧半導(dǎo)體（臺灣）有限公司	VBSEMI
ABN8P10	文件：13.85927 Mbytes Page：51 Pages	Heavydutyswitches&pilotlightsofferbothvarietyandreliabilityEnduresharshenvironments	ETC1List of Unclassifed Manufacturers etc未分類制造商未分類制造商	ETC1
FQB8P10	文件：667.16 Kbytes Page：9 Pages	100VP-ChannelMOSFET GeneralDescription TheseP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQB8P10	文件：1.23782 Mbytes Page：8 Pages	P-ChannelQFET?MOSFET-100V,-8.0A,185m廓	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQB8P10TM	文件：1.23782 Mbytes Page：8 Pages	P-ChannelQFET?MOSFET-100V,-8.0A,185m廓	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQD8P10	文件：662.37 Kbytes Page：9 Pages	100VP-ChannelMOSFET Description ThisP-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQD8P10	文件：1.25031 Mbytes Page：9 Pages	P-ChannelQFET?MOSFET-100V,-6.6A,530m廓 Description ThisP-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQD8P10TF	文件：551.59 Kbytes Page：9 Pages	P-ChannelQFETMOSFET-100V,-6.6A,530m GeneralDescription TheseP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQD8P10TM	文件：645.51 Kbytes Page：7 Pages	100VP-ChannelMOSFET Description ThisP-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQD8P10TM	文件：699.9 Kbytes Page：4 Pages	P-channelEnhancementModePowerMOSFET Features ?VDS=-100V,ID=-13A RDS(ON)	BychipBYCHIP ELECTRONICS CO., LIMITED 百域芯深圳市百域芯科技有限公司	Bychip
FQI8P10	文件：667.16 Kbytes Page：9 Pages	100VP-ChannelMOSFET GeneralDescription TheseP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQP8P10	文件：372.01 Kbytes Page：2 Pages	iscP-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=-8.0A@TC=25℃ ·DrainSourceVoltage-VDSS=-100V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.53Ω(Max)@VGS=-10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
FQP8P10	文件：662.86 Kbytes Page：8 Pages	100VP-ChannelMOSFET	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQPF8P10	文件：667.32 Kbytes Page：8 Pages	100VP-ChannelMOSFET GeneralDescription TheseP-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQU8P10	文件：662.37 Kbytes Page：9 Pages	100VP-ChannelMOSFET Description ThisP-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQU8P10	文件：1.25031 Mbytes Page：9 Pages	P-ChannelQFET?MOSFET-100V,-6.6A,530m廓 Description ThisP-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQU8P10TU	文件：1.25031 Mbytes Page：9 Pages	P-ChannelQFET?MOSFET-100V,-6.6A,530m廓 Description ThisP-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
KSM8P10	文件：1.75714 Mbytes Page：6 Pages	100VP-ChannelMOSFET	KERSEMI Kersemi Electronic Co., Ltd.	KERSEMI

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詳細參數(shù)

型號：
RFP8P10
功能描述：
MOSFET TO-220
RoHS：
否
制造商：
STMicroelectronics
晶體管極性：
N-Channel
汲極/源極擊穿電壓：
650 V
閘/源擊穿電壓：
25 V
漏極連續(xù)電流：
130 A 電阻汲極/源極
RDS（導(dǎo)通）：
0.014 Ohms
配置：
Single
安裝風(fēng)格：
Through Hole
封裝/箱體：
Max247
封裝：
Tube

供應(yīng)商	型號	品牌	批號	封裝	庫存	備注	價格
深圳市高捷芯城科技有限公司	RFP8P10	onsemi(安森美)	23+	TO-220	7793	支持大陸交貨,美金交易。原裝現(xiàn)貨庫存。	詢價
深圳市昌和盛利電子有限公司	RFP8P10	INTERSIL/FSC	23+	TO-220	28610		詢價
深圳市一線半導(dǎo)體有限公司	RFP8P10	Intersil	24+		8866		詢價
深圳市正邁科技有限公司	RFP8P10	FSC/ON	23+	原包裝原封 □□	30500	原裝進口特價供應(yīng) QQ 1304306553 更多詳細咨詢庫存	詢價
深圳市國宇半導(dǎo)體科技有限公司	RFP8P10	F	23+	TO-220AB	10000	公司只做原裝正品	詢價
深圳市威爾健半導(dǎo)體有限公司	RFP8P10	VBSEMI/臺灣微碧	23+	TO-220AB	50000	全新原裝正品現(xiàn)貨,支持訂貨	詢價
深圳市河鋒鑫科技有限公司	RFP8P10	INTERSIL	2022+	to-220	12888	原廠代理終端免費提供樣品	詢價
易創(chuàng)佳業(yè)科技（深圳）有限公司	RFP8P10	F	23+	TO-220AB	6000	原裝正品，支持實單	詢價
深圳市威雅利發(fā)展有限公司	RFP8P10	VBsemi	21+	TO220	10020	一級代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力	詢價
深圳市維爾達電子有限公司	RFP8P10	VBsemi	2204+	TO220	5731	一級代理/分銷渠道價格優(yōu)勢十年芯程一路只做原裝正品	詢價

更多RFP8P10供應(yīng)商更新時間2024-12-31 14:14:00

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