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3580

HighVoltageOPERATIONALAMPLIFIERS

TI1Texas Instruments

德州儀器

3580

CeramicStand-offInsulatorsforRF-Equipment

CeramicStand-offInsulatorsforRF-Equipment MATERIAL: ??Stand-offinsulatorelementsmadefromClass1Ceramic ??material(C221-IEC60672-3),bodycompletelyglazed. ??Connectionterminals:brass OPERATINGCONDITIONS: ??Maximumoperatingtemperature+100°C ??Maximumcompressive

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

3580

Triaxial(F)BulkheadReceptacle

POMONA

Pomona Electronics

3580

Nytye?MountingPlatforms

HeycoHeyco.

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ABC3580

BulkSimplexFiberOpticCable

GLENAIR

Glenair, Inc.

ABC-3580

BulkSimplexFiberOpticCable

GLENAIR

Glenair, Inc.

AHA3580

80MBYTES/SECALDCDATACOMPRESSIONCOPROCESSORIC

ETC1List of Unclassifed Manufacturers

etc未分類制造商未分類制造商

APL3580

33mW3AHighSideLoadSwitches

ANPECAnpec Electronics Coropration

茂達(dá)電子茂達(dá)電子股份有限公司

APL3580HAI-TRG

33mW3AHighSideLoadSwitches

ANPECAnpec Electronics Coropration

茂達(dá)電子茂達(dá)電子股份有限公司

APT3580AN

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=9A@TC=25℃ ·DrainSourceVoltage :VDSS=350V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.8Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

APT3580BN

iscN-ChannelMOSFETTransistor

DESCRIPTION ·DrainCurrent:ID=10A@TC=25℃ ·DrainSourceVoltage :VDSS=350V(Min) ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·highvoltage,highspeedpowerswitching

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

APT3580CN

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=8A@TC=25℃ ·DrainSourceVoltage :VDSS=350V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.8Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

APT3580GN

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent:ID=7.5A@TC=25℃ ·DrainSourceVoltage :VDSS=350V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.8Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-

ISCInchange Semiconductor Company Limited

無錫固電無錫固電半導(dǎo)體股份有限公司

ATN3580

FixedAttenuatorPads

Description TheATN3580seriesofattenuatorchipsincorporatethinfilmresistorsonhighresistivitysiliconchipstoachieveprecisionattenuation,tightflatnessandhighreturnlossto40GHz.ThedesignusesabalancedTEEresistivestructuretoassurebroadbandwidthperformance.Thethin

SKYWORKSSkyworks Solutions Inc.

思佳訊美國思佳訊公司

BP3580

IntegratedWirelessLANModules

ROHMRohm

羅姆羅姆半導(dǎo)體集團(tuán)

BSTF3580

Phase-controlthyristors

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BSTH3580

Phase-controlthyristors

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BSTL3580

Phase-controlthyristors

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BSTN3580

Phase-controlthyristors

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

BSTP3580

Phase-controlthyristors

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

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11200
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9866
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12
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MINI
24+
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3600
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con
10000
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更多RFPD3580C供應(yīng)商 更新時間2025-1-17 10:30:00

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