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RH-AHC00K1中文資料意法半導(dǎo)體數(shù)據(jù)手冊PDF規(guī)格書
RH-AHC00K1規(guī)格書詳情
Features
? 1.8 V to 3.3 V nominal supply
? 3.6 V max. operating
? 4.8 V AMR
? Very high speed: propagation delay of 3 ns maximum guaranteed
? Pure CMOS process
? CMOS output
? Ultra low power
? 300 krad TID targeted
? 125 MeV.cm2/mg SEL free
? 62.5 MeV.cm2/mg SET free
Description
The RHFAHC00 device is a very high speed pure CMOS quad 2-input NAND gate,
designed for radiation hardness and characterized in total ionization dose (TID) and
single event effect (SEE).
It is available in die-form and in hermetic ceramic Flat 14-lead screened as per MILPRF-
38535 to comply with the needs of space applications. It can work from -55 °C
to +125 °C ambient temperature.
Applications
? Oscillators in space applications
? FPGA
? Microcontrollers
