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RJK2009DPM-E

Silicon N Channel MOS FET High Speed Power Switching

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

RJK2009DPM-E

Silicon N Channel MOS FET High Speed Power Switching

RENESASRenesas Technology Corp

瑞薩瑞薩科技有限公司

RN2009

Switching,InverterCircuit,InterfaceCircuitAndDriverCircuitApplications

Switching,InverterCircuit,InterfaceCircuitAndDriverCircuitApplications ●Withbuilt-inbiasresistors ●Simplifycircuitdesign ●Reduceaquantityofpartsandmanufacturingprocess ●ComplementarytoRN1007~RN1009

TOSHIBAToshiba Semiconductor

東芝株式會(huì)社東芝

RSZ-2009

1WattSMDMiniatureIsolatedSingleOutput

RECOM

Recom International Power

RSZ-2009HP

1WattSMDMiniatureIsolatedSingleOutput

RECOM

Recom International Power

SER2009

ShieldedPowerInductor??SER2000

COILCRAFTCoilcraft lnc.

線藝美國(guó)線藝公司

SL2009

DualstageIFamplifierforcabletuners

Description TheSL2009isadualIFamplifierintendedforapplicationincabletuners,andintegratesalloftheIFgainandAGCrequiredtodeliver1Vp-pinastandardtunerconfiguration. Features ?SinglechipsolutionfortunerIFgainandAGC ?Contains34dBofAGCsharedbetweentwoAG

ZARLINK

Zarlink Semiconductor

SL2009KG

DualstageIFamplifierforcabletuners

Description TheSL2009isadualIFamplifierintendedforapplicationincabletuners,andintegratesalloftheIFgainandAGCrequiredtodeliver1Vp-pinastandardtunerconfiguration. Features ?SinglechipsolutionfortunerIFgainandAGC ?Contains34dBofAGCsharedbetweentwoAG

ZARLINK

Zarlink Semiconductor

SMS2009E

N-ChEnhancementModePowerMOSFET

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

SMS2009E-C

N-ChEnhancementModePowerMOSFET

SECOSSeCoS Halbleitertechnologie GmbH

喜可士喜可士股份有限公司

SRN2009T

Semi-shieldedPowerInductors

BournsBourns Electronic Solutions

伯恩斯

SRU2009

ShieldedSMDPowerInductors

BournsBourns Electronic Solutions

伯恩斯

SRU2009

ShieldedSMDPowerInductors

BournsBourns Electronic Solutions

伯恩斯

SSD2009

DualN-CHANNELPOWERMOSFET

FEATURES ?LowerRDS(ON) ?ImprovedInductiveRuggedness ?FastSwitchingTimes ?LowInputCapacitance ?ExtendedSafeOperatingArea ?ImprovedHighTemperatureReliability

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

SSD2009A

DualN-CHANNELPOWERMOSFET

FEATURES ?LowerRDS(ON) ?ImprovedInductiveRuggedness ?FastSwitchingTimes ?LowInputCapacitance ?ExtendedSafeOperatingArea ?ImprovedHighTemperatureReliability

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

SSD2009A

DualN-CHANNELPOWERMOSFET

FEATURES ?LowerRDS(ON) ?ImprovedInductiveRuggedness ?FastSwitchingTimes ?LowInputCapacitance ?ExtendedSafeOperatingArea ?ImprovedHighTemperatureReliability

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

SSD2009ATF

DualN-CHANNELPOWERMOSFET

FEATURES ?LowerRDS(ON) ?ImprovedInductiveRuggedness ?FastSwitchingTimes ?LowInputCapacitance ?ExtendedSafeOperatingArea ?ImprovedHighTemperatureReliability

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

SSR2009CTM

20AMPS100VOLTSCENTERTAPSCHOTTKYRECTIFIER

SSDI

Solid States Devices, Inc

SSR2009CTZ

20AMPS100VOLTSCENTERTAPSCHOTTKYRECTIFIER

SSDI

Solid States Devices, Inc

SSR2009M

20AMPS100VOLTSCHOTTKYRECTIFER

SSDI

Solid States Devices, Inc

詳細(xì)參數(shù)

  • 型號(hào):

    RJK2009DPM-E

  • 制造商:

    RENESAS

  • 制造商全稱:

    Renesas Technology Corp

  • 功能描述:

    Silicon N Channel MOS FET High Speed Power Switching

供應(yīng)商型號(hào)品牌批號(hào)封裝庫(kù)存備注價(jià)格
RENEAS
08+
TO220/3
2550
全新原裝進(jìn)口自己庫(kù)存優(yōu)勢(shì)
詢價(jià)
RENEAS
24+
TO2203
5000
只做原裝公司現(xiàn)貨
詢價(jià)
RENEAS
17+
TO220/3
9988
只做原裝進(jìn)口,自己庫(kù)存
詢價(jià)
RENESAS
2020+
TO-263
80000
只做自己庫(kù)存,全新原裝進(jìn)口正品假一賠百,可開(kāi)13%增
詢價(jià)
RENESAS
23+
TO-263
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價(jià)
RENESAS/瑞薩
23+
TO-263
50000
全新原裝正品現(xiàn)貨,支持訂貨
詢價(jià)
RENESAS/瑞薩
2022
TO-263
80000
原裝現(xiàn)貨,OEM渠道,歡迎咨詢
詢價(jià)
RENESAS
1932+
TO-263
338
一級(jí)代理,專注軍工、汽車、醫(yī)療、工業(yè)、新能源、電力
詢價(jià)
RENEAS
23+
TO220/3
20000
全新原裝假一賠十
詢價(jià)
RENESAS
TO-263
699839
集團(tuán)化配單-有更多數(shù)量-免費(fèi)送樣-原包裝正品現(xiàn)貨-正規(guī)
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更多RJK2009DPM-E供應(yīng)商 更新時(shí)間2025-1-11 17:49:00