RJK60S3DPD

600V - 12A - SJ MOS FET High Speed Power Switching

Features ?SuperjunctionMOSFET ?Lowon-resistance RDS(on)=0.35Ωtyp.(atID=6A,VGS=10V,Ta=25°C) ?Highspeedswitching tf=21nstyp.(atID=6A,VGS=10V,RL=50,Rg=10,Ta=25°C)

RJK60S3DPD-00J2

600V - 12A - SJ MOS FET High Speed Power Switching

Features ?SuperjunctionMOSFET ?Lowon-resistance RDS(on)=0.35Ωtyp.(atID=6A,VGS=10V,Ta=25°C) ?Highspeedswitching tf=21nstyp.(atID=6A,VGS=10V,RL=50,Rg=10,Ta=25°C)

DC60S3

PANELMOUNT

Features ?Ratingsfrom3Ato7A@60VDC ?Bi-PolarTransistorOutput ?ULApproved,CEComplianttoEN60950-1 ?ImprovedSEMSScrewandWasher ?RedesignedHousingwithAnti-RotationBarriers ?ACandDCControl ?EpoxyFreeDesign

DC60S3

THEGLOBALEXPERTINSOLIDSTATERELAYTECHNOLOGY

DPASeries ?16PinDIPSSR ?Ratingsto1A@280VAC ?SCRoutput ?Voltageorcurrent-controlinput ?Zero-crossing(resistiveloads)output

DC60S3

panelmount

DC60S3

3-7Amp60VdcDCOutput

L60S3

SemiconductorFuses

RJK60S3DPE

600V-12A-SJMOSFETHighSpeedPowerSwitching

Features ●SuperjunctionMOSFET ●Lowon-resistance RDS(on)=0.35Ωtyp.(atID=6A,VGS=10V,Ta=25°C) ●Highspeedswitching tf=21nstyp.(atID=6A,VGS=10V,RL=50Ω,Rg=10,Ta=25°C)