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零件編號(hào)	下載&訂購	功能描述	制造商&上傳企業(yè)	LOGO
RLD13N06	文件：239.92 Kbytes Page：5 Pages	P-Channel Enhancement Mode MOSFET Description TheRLD13N06usesadvancedtrenchtechnologytoprovideexcellentRDS(ON), lowgatechargeandoperationwithgatevoltagesaslowas4.5V. ThisdeviceissuitableforuseasaBatteryprotectionorinotherSwitchingapplication. Application Brushlessmotor Loadswitch Unint	GWSEMIGoodwork Semiconductor Co., Ltd 唯圣電子唯圣電子有限公司	GWSEMI
13N06L	文件：666.59 Kbytes Page：9 Pages	60VLOGICN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQB13N06	文件：672.55 Kbytes Page：9 Pages	60VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQB13N06L	文件：666.59 Kbytes Page：9 Pages	60VLOGICN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQD13N06	文件：305.53 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=10A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.14Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC
FQD13N06	文件：659.99 Kbytes Page：10 Pages	60VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQD13N06	文件：803.8 Kbytes Page：8 Pages	N-ChannelQFET?MOSFET60V,10A,140m廓 Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQD13N06	文件：803.8 Kbytes Page：8 Pages	N-ChannelQFETMOSFET60V,10A,140m	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQD13N06L	文件：653.59 Kbytes Page：9 Pages	60VLOGICN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology.Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwithst	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQD13N06L	文件：916.61 Kbytes Page：10 Pages	N-ChannelQFET?MOSFET Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQD13N06L	文件：916.61 Kbytes Page：10 Pages	N-ChannelQFET?MOSFET60V,11A,115m廓 Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQD13N06L	文件：787.87 Kbytes Page：6 Pages	60VN-ChannelMOSFET Features ID=5.5A LowGateCharge(Typ.4.8nC) LowCrss(Typ.17pF) LowLevelGateDriveRequirementsAllowing DirectOperationformLogicDrivers VDS=60V RDS(ON)(atVGS=10V)	UMWGuangdong Youtai Semiconductor Co., Ltd. 友臺(tái)半導(dǎo)體廣東友臺(tái)半導(dǎo)體有限公司	UMW
FQD13N06LTM	文件：635.45 Kbytes Page：5 Pages	N-channelEnhancementModePowerMOSFET Features ?VDS=60V,ID=50A RDS(ON)	BychipBYCHIP ELECTRONICS CO., LIMITED 百域芯深圳市百域芯科技有限公司	Bychip
FQD13N06LTM	文件：787.87 Kbytes Page：6 Pages	60VN-ChannelMOSFET Features ID=5.5A LowGateCharge(Typ.4.8nC) LowCrss(Typ.17pF) LowLevelGateDriveRequirementsAllowing DirectOperationformLogicDrivers VDS=60V RDS(ON)(atVGS=10V)	UMWGuangdong Youtai Semiconductor Co., Ltd. 友臺(tái)半導(dǎo)體廣東友臺(tái)半導(dǎo)體有限公司	UMW
FQD13N06LTM	文件：916.61 Kbytes Page：10 Pages	N-ChannelQFET?MOSFET60V,11A,115m廓 Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQD13N06TF	文件：803.8 Kbytes Page：8 Pages	N-ChannelQFETMOSFET60V,10A,140m	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQD13N06TM	文件：803.8 Kbytes Page：8 Pages	N-ChannelQFET?MOSFET60V,10A,140m廓 Description ThisN-ChannelenhancementmodepowerMOSFETisproducedusingFairchildSemiconductor’sproprietaryplanarstripeandDMOStechnology.ThisadvancedMOSFETtechnologyhasbeenespeciallytailoredtoreduceon-stateresistance,andtoprovidesuperiorswitchingperformanceandhighav	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQI13N06	文件：672.55 Kbytes Page：9 Pages	60VN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQI13N06L	文件：666.59 Kbytes Page：9 Pages	60VLOGICN-ChannelMOSFET GeneralDescription TheseN-ChannelenhancementmodepowerfieldeffecttransistorsareproducedusingFairchild’sproprietary,planarstripe,DMOStechnology. Thisadvancedtechnologyhasbeenespeciallytailoredtominimizeon-stateresistance,providesuperiorswitchingperformance,andwiths	FairchildFairchild Semiconductor 仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司	Fairchild
FQP13N06	文件：302.06 Kbytes Page：2 Pages	iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=13A@TC=25℃ ·DrainSourceVoltage-VDSS=60V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=0.135Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive.	ISCInchange Semiconductor Company Limited 無錫固電無錫固電半導(dǎo)體股份有限公司	ISC

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供應(yīng)商	型號(hào)	品牌	批號(hào)	封裝	庫存	備注	價(jià)格
深圳市永貝爾科技有限公司	RLD16	LITTELFUSE	23+	NA	25060	只做進(jìn)口原裝,終端工廠免費(fèi)送樣	詢價(jià)
貿(mào)澤芯城（深圳）電子科技有限公司	RLD16P090BF	PTTC(聚鼎	23+	DIP	11200	原廠授權(quán)一級(jí)代理、全球訂貨優(yōu)勢(shì)渠道、可提供一站式BO	詢價(jià)
深圳市明嘉萊科技有限公司	RLD16P090BF	聚鼎	24+	DIP	860000	明嘉萊只做原裝正品現(xiàn)貨	詢價(jià)
深圳市中遠(yuǎn)芯科技有限公司	RLD16P090BF	聚鼎	2017+	DIP	88000	原裝現(xiàn)貨	詢價(jià)
艾睿國(guó)際（香港）有限公司	RLD16P250GF	PTTC(聚鼎)	2112+	Through Hole	115000	500個(gè)/袋一級(jí)代理專營(yíng)品牌!原裝正品,優(yōu)勢(shì)現(xiàn)貨,長(zhǎng)期	詢價(jià)
深圳市航宇科工半導(dǎo)體有限公司	RLD16P250GF	PTTC(聚鼎)	21+	徑向引線	4000	中國(guó)航天工業(yè)部戰(zhàn)略合作伙伴行業(yè)領(lǐng)導(dǎo)者	詢價(jià)

更多RLD13N06供應(yīng)商更新時(shí)間2024-12-31 13:34:00

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