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RLGB30N60CT

IGBT

Features 600V,30A VCE(sat)(typ.)=1.9V@VGE=15V,IC=30A Highspeedswitching Highersystemefficiency Softcurrentturn-offwaveforms GeneralDescription TrenchIGBTsofferlowerlossesandhigherenergy efficiencyforapplicationsuchasSMPS,generalinverter andothersoftswitchingapp

GWSEMIGoodwork Semiconductor Co., Ltd

唯圣電子唯圣電子有限公司

RLPGB30N60CT

IGBT

Features 600V,30A VCE(sat)(typ.)=1.9V@VGE=15V,IC=30A Highspeedswitching Highersystemefficiency Softcurrentturn-offwaveforms GeneralDescription TrenchIGBTsofferlowerlossesandhigherenergy efficiencyforapplicationsuchasSMPS,generalinverter andothersoftswitchingapp

GWSEMIGoodwork Semiconductor Co., Ltd

唯圣電子唯圣電子有限公司

SGB30N60

FastIGBTinNPT-technology

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SGB30N60

FastIGBTinNPT-technology75lowerEoffcomparedtopreviousgeneration

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SGH30N60RUF

ShortCircuitRatedIGBT

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

SGH30N60RUFD

ShortCircuitRatedIGBT

FairchildFairchild Semiconductor

仙童半導(dǎo)體飛兆/仙童半導(dǎo)體公司

SGP30N60

FastIGBTinNPT-technology

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SGP30N60

FastIGBTinNPT-technology

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SGP30N60

FastIGBTinNPT-technology

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SGP30N60HS

HighSpeedIGBTinNPT-technology30lowerEoffcomparedtopreviousgeneration

HighSpeedIGBTinNPT-technology ?30lowerEoffcomparedtopreviousgeneration ?Shortcircuitwithstandtime–10μs ?Designedforoperationabove30kHz ?NPT-Technologyfor600Vapplicationsoffers: -parallelswitchingcapability -moderateEoffincreasewithtemperature -verytigh

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SGP30N60HS

HIGHTSPEEDIGBTCHIPINNPT-TECHNOLOGY

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SGW30N60

FastIGBTinNPT-technology

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SGW30N60

FastIGBTinNPT-technology

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SGW30N60

FastIGBTinNPT-technology

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SGW30N60HS

HighSpeedIGBTinNPT-technology30lowerEoffcomparedtopreviousgeneration

HighSpeedIGBTinNPT-technology ?30lowerEoffcomparedtopreviousgeneration ?Shortcircuitwithstandtime–10μs ?Designedforoperationabove30kHz ?NPT-Technologyfor600Vapplicationsoffers: -parallelswitchingcapability -moderateEoffincreasewithtemperature -verytigh

InfineonInfineon Technologies AG

英飛凌英飛凌科技股份公司

SIHA30N60AEL

ELSeriesPowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHB30N60E

ESeriesPowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHF30N60E

ESeriesPowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHF30N60E

ESeriesPowerMOSFET

FEATURES ?Lowfigure-of-merit(FOM)RonxQg ?Lowinputcapacitance(Ciss) ?Reducedswitchingandconductionlosses ?Ultralowgatecharge(Qg) ?Avalancheenergyrated(UIS) ?Materialcategorization:fordefinitionsofcompliance pleaseseewww.vishay.com/doc?99912 APPLICATIONS ?

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

SIHF30N60E

ESeriesPowerMOSFET

VishayVishay Siliconix

威世科技威世科技半導(dǎo)體

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更多RLGB30N60CT供應(yīng)商 更新時(shí)間2024-12-23 14:40:00