RM135N100T2中文資料RECTRON數(shù)據(jù)手冊PDF規(guī)格書

Description

The RM135N100T2 uses Super Trench technology that is

uniquely optimized to provide the most efficient high

frequency switching performance. Both conduction and

switching power losses are minimized due to an extremely

low combination of RDS(ON) and Qg. This device is ideal for

high-frequency switching and synchronous rectification.

General Features

VDS =100V,ID =135A

RDS(ON) <4.5mΩ @ VGS=10V

Excellent gate charge x RDS(on) product

Very low on-resistance RDS(on)

175 °C operating temperature

Pb-free lead plating

100 UIS tested