RM3205V中文資料RECTRON數(shù)據(jù)手冊PDF規(guī)格書
| 廠商型號 |
RM3205V |
| 功能描述 | N-Channel Enhancement Mode Power MOSFET |
| 絲印標(biāo)識 | |
| 封裝外殼 | TO-220-3L |
| 文件大小 |
566.5 Kbytes |
| 頁面數(shù)量 |
7 頁 |
| 生產(chǎn)廠商 | Rectron Semiconductor |
| 企業(yè)簡稱 |
RECTRON |
| 中文名稱 | Rectron Semiconductor官網(wǎng) |
| 原廠標(biāo)識 |  |
| 數(shù)據(jù)手冊 | |
| 更新時間 | 2025-3-29 23:00:00 |
| 人工找貨 | RM3205V價格和庫存，歡迎聯(lián)系客服免費(fèi)人工找貨 |
RM3205V規(guī)格書詳情
General Features
VDS = 55V,ID =110A
RDS(ON) < 12mΩ @ VGS =10V
Special process technology for high ESD capability
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Good stability and uniformity with high EAS
Excellent package for good heat dissipation
