RM5N500IP中文資料RECTRON數(shù)據(jù)手冊PDF規(guī)格書
RM5N500IP規(guī)格書詳情
General Features
VDS =500V,ID =5A
RDS(ON) <1.5 @ VGS=10V
High density cell design for ultra low Rdson
Fully characterized avalanche voltage and current
Good stability and uniformity with high EAS
Excellent package for good heat dissipation
Special process technology for high ESD capability
